IXGA20N60B IXYS, IXGA20N60B Datasheet - Page 3

• Manufacturer Part Number: IXGA20N60B
• Description: IGBT 40A 600V TO-263AA
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGA20N60B

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-263AA
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): 20
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

© 2000 IXYS All rights reserved
100
80
60
40
20
0
100
100
80
60
40
20
Fig. 1. Output Characteristics
Fig. 3. High Temperature Output Characteristics
80
60
40
20
0
0
0
Fig. 5. Admittance Curves
0
3
T
V
J
T
CE
= 25°C
J
= 125°C
1
= 10V
4
1
T
J
= 125°C
5
2
V
V
V
2
CE
CE
GE
6
V
GE
T
- Volts
- Volts
- Volts
J
= 15V
V
= 25°C
3
GE
13V
11V
7
3
= 15V
13V
11V
8
4
4
5V
9V
7V
9
5V
9V
7V
5
10
5
4000
1000
1.75
1.50
1.25
1.00
0.75
0.50
100
200
160
120
10
80
40
Fig. 2. Extended Output Characteristics
Fig. 4. Temperature Dependence of V
0
25
0
0
V
GE
Fig. 6. Capacitance Curves
5
T
= 15V
J
50
= 25°C
2
10
T
J
15
75
V
- Degrees C
4
C
V
C
C
CE
oss
rss
CE
iss
-Volts
20
- Volts
IXGA 20N60B
IXGP 20N60B
100
6
25
I
I
I
C
C
V
C
= 10A
GE
= 40A
= 20A
= 15V
30
f = 1Mhz
125
8
35
5V
11V
7V
13V
9V
CE(sat)
150
3 - 4
40
10