IXGA48N60B3 IXYS, IXGA48N60B3 Datasheet - Page 3

• Manufacturer Part Number: IXGA48N60B3
• Description: IGBT 280A 600V TO-263AA
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGA48N60B3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 32A
• Current - Collector (ic) (max): 48A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 280
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 116
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.30
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
6
0.4
0.4
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
7
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
0.8
0.8
I
C
8
= 80A
40A
20A
V
V
9
CE
GE
1.2
1.2
V
@ 125ºC
@ 25ºC
CE
- Volts
- Volts
10
- Volts
V
GE
1.6
1.6
V
GE
11
= 15V
13V
11V
= 15V
13V
11V
12
2.0
2.0
T
J
13
7V
5V
= 25ºC
9V
2.4
2.4
14
9V
7V
5V
2.8
2.8
15
300
270
240
210
180
150
120
200
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
80
60
40
20
0
0
-50
4.0
0
V
GE
V
GE
4.5
Fig. 2. Extended Output Characteristics
= 15V
-25
T
2
= 15V
13V
11V
J
IXGA48N60B3 IXGP48N60B3
= 125ºC
Fig. 4. Dependence of V
5.0
- 40ºC
25ºC
4
0
Fig. 6. Input Admittance
Junction Temperature
9V
7V
5.5
T
J
- Degrees Centigrade
25
6
6.0
V
CE
V
@ 25ºC
GE
- Volts
6.5
50
8
- Volts
7.0
10
IXGH48N60B3
75
I
I
CE(sat)
I
7.5
C
C
C
= 40A
= 80A
= 20A
100
12
8.0
on
125
14
8.5
150
9.0
16