IRG4PH30KDPBF International Rectifier, IRG4PH30KDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PH30KDPBF
• Description: IGBT W/DIODE 1200V 20A TO247AC
• Manufacturer: International Rectifier

Specifications of IRG4PH30KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PH30KDPBF

Switching Characteristics @ T
IRG4PH30KD
Electrical Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
fe
E
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ge
gc
ies
oes
res
g
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
4.3
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.19
3.10
3.90
3.01
0.95
1.15
2.10
220
540
800
130
250
210
180
-12
6.5
3.4
3.3
9.0
3.5
4.4
5.9
—
—
—
—
—
53
21
39
84
90
—
42
79
97
13
60
14
50
72
3500
±100
250
340
140
110
200
380
4.2
6.0
3.8
3.7
2.6
7.0
8.8
80
14
32
76
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
ns
µs
ns
pF
ns
V
V
S
V
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
J
GE
CC
GE
J
GE
GE
CC
J
J
J
J
J
J
J
J
= 10A
= 20A
= 10A, T
= 10A
= 10A, T
= 10A
= 10A, V
= 10A, V
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 720V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
See Fig.
See Fig.
Conditions
= 150°C
= 150°C
Conditions
= 250µA
= 1.0mA
See Fig.
See Fig.
G
G
G
C
= 250µA
= 250µA
J
= 800V
= 800V
= 1200V
= 1200V, T
= 23Ω
= 5.0Ω
= 23Ω,
= 10A
= 125°C
14
15
17
16
See Fig. 10,11,18
See Fig.8
See Fig. 7
www.irf.com
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
GE
I
R
J
F
= 150°C
= 200V
= 10A
= 15V