IRG4BC30FDPBF International Rectifier, IRG4BC30FDPBF Datasheet
IRG4BC30FDPBF
Specifications of IRG4BC30FDPBF
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IRG4BC30FDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT ...
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J ∆ ∆ ƒ „ J Ω Ω www.irf.com ...
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0.1 1000 T = 25°C J 100 T = 150° 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE www.irf.com 1 f, Frequency ...
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T , Case Temperature (° 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 2 15V V = ...
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GE 1600 C ies 1200 800 C oes 400 C res Collector-to-Emitter Voltage ( 480V 15V 25° 17A C 2.10 2.00 ...
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Ω 150° 480V 15V GE 6.0 4.0 2.0 0 Collector-to-Emitter Current (A) C 100 10 1 0.4 6 1000 V = 20V ...
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V = 200V 125° 25°C J 120 I = 24A 12A 100 di /dt - (A/µs) f 600 V = 200V 125°C J ...
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Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on ...
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Figure 18e. L 1000V 50V 6000µF 100V Figure 19. www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT D.U. VCC Figure 20. VCC ...
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Y6HQG ) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" Notes: ‚ CC CES GE ≤ ≤ ƒ „ IR WORLD HEADQUARTERS: ...