IXGP20N120B3 IXYS, IXGP20N120B3 Datasheet - Page 3

• Manufacturer Part Number: IXGP20N120B3
• Description: IGBT 1200V 36ATO-220
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGP20N120B3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 16A
• Current - Collector (ic) (max): 36A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 36
• Ic90, Tc=90°c, Igbt, (a): 20
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.10
• Tfi, Typ, Tj=25°c, Igbt, (ns): 155
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.63
• Rthjc, Max, Igbt, (°c/w): 0.69
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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32
28
24
20
16
12
32
28
24
20
16
12
8
7
6
5
4
3
2
1
8
4
0
8
4
0
0.0
0.0
5
0.5
0.5
6
Fig. 5. Collector-to-Emitter Voltage
1.0
7
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
1.0
vs. Gate-to-Emitter Voltage
1.5
8
1.5
8A
V
2.0
16A
9
V
CE
V
@ 125ºC
2.0
CE
@ 25ºC
GE
I
- Volts
C
- Volts
2.5
10
= 32A
- Volts
V
2.5
GE
V
3.0
GE
11
= 15V
13V
11V
= 15V
3.0
13V
11V
3.5
12
T
3.5
J
5V
4.0
9V
7V
13
= 25ºC
7V
5V
9V
4.0
4.5
14
5.0
4.5
15
140
120
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
40
35
30
25
20
15
10
0
5
0
-50
4.0
0
V
GE
4.5
Fig. 2. Extended Output Characteristics
-25
= 15V
4
Fig. 4. Dependence of V
5.0
T
0
Fig. 6. Input Admittance
J
Junction Temperature
8
5.5
= - 40ºC
T
V
125ºC
J
GE
25ºC
- Degrees Centigrade
25
= 15V
V
6.0
CE
12
11V
13V
V
@ 25ºC
9V
7V
GE
- Volts
6.5
50
- Volts
16
I
IXGA20N120B3
IXGP20N120B3
C
7.0
= 8A
75
I
C
= 16A
CE(sat)
7.5
20
I
100
C
= 32A
8.0
on
24
125
8.5
150
9.0
28