IXGH30N60B2 IXYS, IXGH30N60B2 Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGH30N60B2
Manufacturer Part Number
IXGH30N60B2
Description
IGBT 600V 70A TO-247
Specifications of IXGH30N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 24A
Current - Collector (ic) (max)
70A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGH30N60B2 D1
Part Number:
IXGH30N60B2 D1
HiPerFAST
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
I
I
V
C25
C110
CM
GES
CES
GEM
C
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
d
© 2003 IXYS All rights reserved
I
C
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600 V
T
Mounting torque (M3)
TO-247 AD
TO-268 SMD
Test Conditions
V
V
V
I
C
C
C
C
C
J
J
GE
CE
GE
CE
= 250 µA, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= V
= 0 V
= 0 V, V
= 24 A, V
CES
TM
VJ
GE
CE
GE
= 125°C, R
= ±20 V
= V
= 15 V
IGBT
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
(T
J
J
J
= 25°C
= 150°C
= 25°C
J
= 25°C, unless otherwise specified)
Advance Technical Data
IXGH 30N60B2
IXGT 30N60B2
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
I
1.13/10 Nm/lb.in.
CM
150
600
600
±20
±30
= 60
190
150
300
70
30
max.
±100
5.0
6
4
1.8
50
1
V
mA
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
V
TO-268
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
(IXGT)
(IXGH)
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
V
I
V
t
C25
fi typ
CE(sat)
CES
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
<
=
E
DS99122(11/03)
1.8 V
70 A
82 ns
C (TAB)
C (TAB)
Related parts for IXGH30N60B2
IXGH30N60B2 Summary of contents
... GE(th CES CE CES ±20 V GES CE(sat © 2003 IXYS All rights reserved Advance Technical Data IXGH 30N60B2 IXGT 30N60B2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 150 = 10 Ω 190 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... R thJC R (TO-247) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4.2 3.9 3.6 3 48A C 3 24A 12A 2.7 2.4 2.1 1.8 1.5 1 Volts G E © 2003 IXYS All rights reserved 300 250 9V 200 7V 150 100 2.5 3 1.3 1.2 9V 1.1 7V 1.0 0.9 5V 0.8 0.7 2 2.5 3 ...
... CE 400 300 200 I = 48A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 C 1.8 1.6 1.4 1 125º ...
... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.0 0.5 0.1 1 © 2003 IXYS All rights reserved 48A C 3 24A 12A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 30N60B2 IXGT 30N60B2 Fig ...
Related keywords
ixgh32n60 ixgh30n60b ixgh32n60b ixgh30n60c2 ixgh36n60b3c1 ixgh32n60c ixgh30n60b2 ixgh32n60a ixgh30n60u1 ixgh30n60c2d1 ixgh30n60bu1 ixgh30n60a ixgh30n120b3d1 IXGH30N60B2 datasheet IXGH30N60B2 data sheet IXGH30N60B2 pdf datasheet IXGH30N60B2 component IXGH30N60B2 part IXGH30N60B2 distributor IXGH30N60B2 RoHS IXGH30N60B2 datasheet download
