IXGH16N60B2D1 IXYS, IXGH16N60B2D1 Datasheet - Page 5

• Manufacturer Part Number: IXGH16N60B2D1
• Description: IGBT 600V 40A TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH16N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 12A
• Current - Collector (ic) (max): 40A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 40
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 16
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.38
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 11
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10,000
1,000
100
0.01
18
16
14
12
10
0.1
10
0.00001
8
6
4
2
0
1
0
0
f
= 1 MHz
5
5
10
10
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
15
15
I
V
C
CE
- Amperes
- Volts
20
C oes
C res
C ies
20
25
Fig. 11. Maximum Transient Thermal Impedance
25
T
0.001
J
30
= - 40ºC
125ºC
25ºC
30
35
Pulse Width - Seconds
35
40
0.01
16
14
12
10
35
30
25
20
15
10
8
6
4
2
0
5
0
IXGA16N60B2D1
100
0
T
R
dv / dt < 10V / ns
J
150
V
I
I
G
C
G
CE
= 125ºC
= 22
= 12A
= 10mA
= 300V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
5
0.1
250
Fig. 8. Gate Charge
300
Q
G
10
- NanoCoulombs
V
350
CE
- Volts
400
IXGH16N60B2D1
IXGP16N60B2D1
15
450
1
500
20
550
600
650
10
25