IRGS8B60KPBF International Rectifier, IRGS8B60KPBF Datasheet - Page 7

• Manufacturer Part Number: IRGS8B60KPBF
• Description: IGBT ULTRA FAST 600V 28A D2PAK
• Manufacturer: International Rectifier

Specifications of IRGS8B60KPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 28A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 28A
• Collector Emitter Saturation Voltage Vce(sat): 2.2V
• Rohs Compliant: Yes
• Package: D2-Pak
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 28
• Ic @ 100c (a): 19
• Vce(on)@25c Typ (v): 1.80
• Vce(on)@25c Max (v): 2.2
• Ets Typ (mj): 0.32
• Ets Max (mj): 0.433
• Pd @25c (w): 167
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGS8B60KPBF

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0.001
0.01
1000
0.1
100
10
10
1
1E-006
1
Fig. 16- Typ. Capacitance vs. V
1
D = 0.50
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0.20
0.10
0.05
0.02
0.01
V
GE
Cies
Coes
Cres
= 0V; f = 1MHz
1E-005
V CE (V)
SINGLE PULSE
( THERMAL RESPONSE )
10
0.0001
t 1 , Rectangular Pulse Duration (sec)
CE
100
0.001
IRGB/S/SL8B60KPbF
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
16
14
12
10
8
6
4
2
0
Fig. 17 - Typical Gate Charge vs. V
i/Ri
R
0
1
R
1
τ
0.01
2
5
τ
R
Q G , Total Gate Charge (nC)
2
2
R
I
2
CE
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
C
= 8.0A; L = 600µH
10
τ
Ri (°C/W)
15
0.491
0.409
0.1
20
300V
0.000190
0.001153
τi (sec)
400V
25
7
GE
30
1