IXGA16N60B2D1 IXYS, IXGA16N60B2D1 Datasheet - Page 5
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IXGA16N60B2D1
Manufacturer Part Number
IXGA16N60B2D1
Description
IGBT FAST B2 600V 40A TO-263
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGP16N60B2D1.pdf
(7 pages)
Specifications of IXGA16N60B2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 12A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
16
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.38
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
11
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-263 (D2 PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGA16N60B2D1
Manufacturer:
IXYS
Quantity:
18 000
© 2010 IXYS CORPORATION, All Rights Reserved
10,000
1,000
100
0.01
18
16
14
12
10
0.1
10
0.00001
8
6
4
2
0
1
0
0
f
= 1 MHz
5
5
10
10
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
15
15
I
V
C
CE
- Amperes
- Volts
20
C oes
C res
C ies
20
25
Fig. 11. Maximum Transient Thermal Impedance
25
T
0.001
J
30
= - 40ºC
125ºC
25ºC
30
35
Pulse Width - Seconds
35
40
0.01
16
14
12
10
35
30
25
20
15
10
8
6
4
2
0
5
0
IXGA16N60B2D1
100
0
T
R
dv / dt < 10V / ns
J
150
V
I
I
G
C
G
CE
= 125ºC
= 22
= 12A
= 10mA
= 300V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
5
0.1
250
Fig. 8. Gate Charge
300
Q
G
10
- NanoCoulombs
V
350
CE
- Volts
400
IXGH16N60B2D1
IXGP16N60B2D1
15
450
1
500
20
550
600
650
10
25