IRG4BH20K-STRLP International Rectifier, IRG4BH20K-STRLP Datasheet

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IRG4BH20K-STRLP

Manufacturer Part Number
IRG4BH20K-STRLP
Description
IGBT ULT FAST 1200V 11A D2PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BH20K-STRLP

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4.3V @ 15V, 5A
Current - Collector (ic) (max)
11A
Power - Max
60W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BH20K-STRLPBF
Manufacturer:
IR
Quantity:
12 000
Benefits
INSULATED GATE BIPOLAR TRANSISTOR
Features
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Latest generation design provides tighter parameter
• Industry standard D
• Lead-Free
• As a Freewheeling Diode we recommend our
• Latest generation 4 IGBT's offer highest power
R
R
R
Wt
V
I
I
I
I
t
V
E
P
P
T
T
C
C
CM
LM
sc
t
V
HEXFRED
Diode and IGBT
minimum EMI / Noise and switching losses in the
switching speed
distribution and higher efficiency than previous
generations
density motor controls possible
CES
GE
ARV
D
D
J
STG
sc
θJC
θCS
θJA
GE
@ T
@ T
@ T
@ T
=10µs @ V
= 15V
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
TM
ultrafast, ultrasoft recovery diodes for
CC
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
= 720V , T
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
2
Pak package
Parameter
J
Parameter
= 125°C,

IRG4BH20K-SPbF
G
n-channel
6 (0.21)
Typ.
0.24
–––
–––
E
C
-55 to +150
D
Max.
1200
±20
130
5.0
11
22
22
10
60
24
2
Pak
Short Circuit Rated
V
@V
CE(on) typ.
V
Max.
GE
UltraFast IGBT
–––
–––
2.1
CES
40
= 15V, I
PD-95891A
= 1200V
= 3.17V
C
01/21/2010
= 5.0A
Units
g (oz)
°C/W
Units
mJ
µs
°C
V
A
V
1

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IRG4BH20K-STRLP Summary of contents

Page 1

... Storage Temperature Range STG Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BH20K-SPbF n-channel  ‚ -55 to +150 Typ. ––– 0.24 ––– 6 (0.21) PD-95891A Short Circuit Rated UltraFast IGBT ...

Page 2

... IRG4BH20K-SPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage „ (BR)ECS Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...

Page 3

... Duty cycle: 50 125˚ 90˚ C sink Gate drive as specified Power Dissipation = 15W 1 , Frequency (kHz) (Load Current = I of fundamental) RMS 100 10 = 15V Fig Typical Transfer Characteristics IRG4BH20K-SPbF Triangular wave: Clamp voltage: 80% of rated 150 C ° J ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) ...

Page 4

... IRG4BH20K-SPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 -60 -40 -20 125 ...

Page 5

... V = 400V CC C SHORTED I = 11A 100 0 Fig Typical Gate Charge vs 50Ohm 15V 960V -60 -40 -20 Ω ) Fig Typical Switching Losses vs. IRG4BH20K-SPbF Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω 2 100 120 140 160 T , Junction Temperature ( C ) ° Junction Temperature ( ° Junction Temperature 30 5 ...

Page 6

... IRG4BH20K-SPbF 5 50Ohm Ω 150 C ° 960V 15V 4.0 GE 3.0 2.0 1.0 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 100 V = 20V 125 SAFE OPERATING AREA Fig Turn-Off SOA o 10 100 1000 10000 , Collector-to-Emitter Voltage (V) www.irf.com ...

Page 7

... V C 90% 10 d(on www.irf.com D.U. VCC D.U. 90% t d(off t=5µs E off off IRG4BH20K-SPbF VCC ICM 480µF Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 960V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BH20K-SPbF 2 2 UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ 6TT@H7G` `@6SÃ ...

Page 9

... Data and specifications subject to change without notice. Visit us at www.irf.com for sales contact information. 01/2010 IRG4BH20K-SPbF 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) 4.72 (.136) 4 ...

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