IXGR60N60C3C1 IXYS, IXGR60N60C3C1 Datasheet

IGBT C3 30A 600V ISOPLUS247

IXGR60N60C3C1

Manufacturer Part Number
IXGR60N60C3C1
Description
IGBT C3 30A 600V ISOPLUS247
Manufacturer
IXYS
Series
GenX3SC™r
Datasheet

Specifications of IXGR60N60C3C1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
170W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.8
Rthjc, Max, Igbt, (°c/w)
0.73
If, Tj=110°c, Diode, (a)
13
Rthjc, Max, Diode, (ºc/w)
1.75
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
w/ SiC Anti-Parallel
Diode
(Electrically Isolated Back Surface)
High Speed PT IGBT for 40-100kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
V
F
T
T
Weight
Symbol
(T
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
J
= 25°C, Unless Otherwise Specified)
TM
T
T
Continuous
Transient
T
T
T
T
T
T
V
Clamped Inductive Load
T
50/60 Hz, RMS, t = 1minute
I
Mounting Force
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Test Conditions
Test Conditions
I
V
V
I
ISOL
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
600V IGBT
= 250μA, V
= 40A, V
= 25°C
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by leads)
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
= 25°C
< 1mA
= V
= 0V, V
CES
, V
GE
GE
VJ
GE
= ±20V
= 125°C, R
CE
= 15V, Note 1
t = 10 s
= 0V
= V
GE
GE
= 1MΩ
G
= 3Ω
T
T
J
J
= 125°C
= 125°C
IXGR60N60C3C1
20..120/4.5..27
3.0
Min.
Characteristic Values
@ V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
CE
≤ V
= 125
2.2
2500
3000
1.7
Typ.
260
±20
±30
260
400
170
150
300
600
600
75
30
13
40
CES
5
±100
Max.
5.5
2.5
50
1
N/lb
mA
mJ
V~
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
A
V
V
V
g
V
I
V
t
ISOPLUS247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Optimized for Low Switching Losses
Square RBSOA
Isolated Mounting Surface
Anti-Parallel Ultra Fast Diode
High Speed Silicon Carbide Schottky
2500V Electrical Isolation
Avalanche Rated
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Co-Pack Diode
- No Reverse Recovery
CES
CE(sat)
G
C
E
TM
C = Collector
≤ ≤ ≤ ≤ ≤
= 600V
= 30A
= 50ns
£
Isolated Tab
DS100098B(01/10)
2.5V

Related parts for IXGR60N60C3C1

IXGR60N60C3C1 Summary of contents

Page 1

... GE(th CES CE CES GE = ±20V 0V, V GES 40A 15V, Note 1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved IXGR60N60C3C1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 260 40 400 = 3Ω 125 G CM ≤ CES 170 -55 ... +150 150 -55 ... +150 2500 3000 20..120/4.5..27 ...

Page 2

... Characteristic Values Min. Typ. 1. 125°C 1.80 J (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR60N60C3C1 ISOPLUS247 (IXGR) Outline Max 110 0.73 °C/W °C/W Max. 2. 1.75 °C 6,404,065 B1 6,683,344 ...

Page 3

... J = 15V GE 13V 11V 2.0 2.4 2.8 3.2 160 T = 25ºC J 140 120 100 IXGR60N60C3C1 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V GE 1.1 I 1.0 0 40A C 0.8 ...

Page 4

... C ies 100 80 C oes res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGR60N60C3C1 Fig. 8. Gate Charge V = 300V 40A NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 3Ω < 10V / ns 150 ...

Page 5

... I = 40A 105 115 125 200 160 180 140 160 120 140 100 120 100 IXGR60N60C3C1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125ºC, 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance d(off) ...

Page 6

... 105 115 125 Fig. 22. Maximum Transient Thermal Impedance for Diodes 0.01 0.1 Pulse Width - Seconds IXGR60N60C3C1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V 25ºC, 125º Amperes C Fig. 21. Forward Current vs. Forward Voltage T = 25º 0.0 0.5 1 ...

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