IXBT32N300 IXYS, IXBT32N300 Datasheet - Page 4

• Manufacturer Part Number: IXBT32N300
• Description: IGBT 3000V 80A 400W TO268
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBT32N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 32A
• Current - Collector (ic) (max): 80A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 80
• Ic90, Tc=90°c, (a): -
• Ic110, Tc=110°c, (a): 32
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 720
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
16
14
12
10
5
0
0
8
6
4
2
0
500
0
0
Fig. 11. Reverse-Bias Safe Operating Area
V
I
I
10
T
R
dV / dt < 10V / ns
C
G
CE
J
G
= 32A
= 10mA
20
= 125ºC
= 10Ω
= 1kV
1000
20
Fig. 7. Transconductance
40
30
Fig. 9. Gate Charge
Q
G
1500
40
60
- NanoCoulombs
I
C
V
CE
- Amperes
50
- Volts
80
2000
60
100
70
T
J
2500
80
120
= - 40ºC
125ºC
25ºC
90
140
100
3000
10,000
1.000
0.100
0.010
0.001
1,000
100
100
90
80
70
60
50
40
30
20
10
10
0.00001
0
0.0
0
f
= 1 MHz
5
Fig. 12. Maximum Transient Thermal
0.0001
Fig. 8. Forward Voltage Drop of
0.5
10
0.001
Fig. 10. Capacitance
1.0
Pulse Width - Seconds
Intrinsic Diode
15
Impedance
V
V
CE
F
T
J
- Volts
0.01
1.5
20
- Volts
= 25ºC
25
2.0
0.1
C ies
C oes
C res
IXBH32N300
IXBT32N300
30
T
J
2.5
= 125ºC
1
35
3.0
10
40