IXBT20N300 IXYS, IXBT20N300 Datasheet - Page 3

• Manufacturer Part Number: IXBT20N300
• Description: IGBT 3000V 50A 250W TO268
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBT20N300

• Voltage - Collector Emitter Breakdown (max): 3000V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 20A
• Current - Collector (ic) (max): 50A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 3000
• Ic25, Tc=25°c, (a): 50
• Ic90, Tc=90°c, (a): -
• Ic110, Tc=110°c, (a): 20
• Vce(sat), Typ, Tj=25°c, (v): 3.2
• Tf Typ, Tj=25°c, (ns): 504
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.5
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

© 2009 IXYS CORPORATION, All Rights Reserved
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
5
0.5
7
0.5
Fig. 5. Collector-to-Emitter Voltage
9
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
1.0
vs. Gate-to-Emitter Voltage
1.0
11
1.5
I
13
C
1.5
V
V
V
@ 125ºC
2.0
= 40A
@ 25ºC
CE
GE
CE
20A
10A
- Volts
15
- Volts
- Volts
2.5
2.0
17
V
3.0
V
GE
GE
19
2.5
= 25V
= 25V
15V
20V
20V
15V
3.5
T
J
21
= 25ºC
10V
10V
3.0
5V
5V
4.0
23
3.5
4.5
25
300
250
200
150
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
45
40
35
30
25
20
15
10
50
5
0
0
-50
3.5
0
V
4.0
Fig. 2. Extended Output Characteristics
GE
2
-25
= 15V
Fig. 4. Dependence of V
4.5
4
V
GE
0
Fig. 6. Input Admittance
Junction Temperature
5.0
= 25V
6
T
20V
T
J
J
- Degrees Centigrade
25
= 125ºC
5.5
- 40ºC
8
15V
10V
25ºC
V
V
@ 25ºC
CE
GE
6.0
10
50
- Volts
- Volts
I
C
6.5
12
= 40A
75
I
C
IXBT20N300
IXBH20N300
CE(sat)
7.0
= 20A
14
I
100
C
= 10A
7.5
16
IXYS REF: B_20N300(5P)03-10-09
on
125
8.0
18
8.5
150
20