IRG4PSH71KDPBF International Rectifier, IRG4PSH71KDPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PSH71KDPBF
• Description: IGBT W/DIODE 1200V 78A SUPER247
• Manufacturer: International Rectifier

Specifications of IRG4PSH71KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 42A
• Current - Collector (ic) (max): 78A
• Power - Max: 350W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 78A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 350W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PSH71KDPBF

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Fig. 9 - Typical Switching Losses vs. Gate
10000
15
14
13
12
11
10
8000
6000
4000
2000
9
0
0
V
V
T
Fig. 7 - Typical Capacitance vs.
I
J
C
1
CC
GE
= 25
= 800V
= 15V
= 42A
C
C
R
C
ies
Collector-to-Emitter Voltage
10
oes
V
G
res
CE
°
, Gate Resistance
C
V
C
C
C
Resistance
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
20
=
=
=
=
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
30
f = 1MHz
gc ,
gc
C
ce
40
SHORTED
50
100
100
20
15
10
10
Fig. 10 - Typical Switching Losses vs.
5
0
1
-60 -40 -20
0
V
Fig. 8 - Typical Gate Charge vs.
R
V
V
I
GE
CC
CC
C
G
= 400V
= 42A
= 15V
= 800V
= 5.0
Junction Temperature
T , Junction Temperature ( C )
100
Q , Total Gate Charge (nC)
J
Gate-to-Emitter Voltage
G
0
20
200
40
IRG4PSH71KD
60
300
80 100 120 140 160
I =
I =
I =
C
C
C
400
°
84
42
21
A
A
A
5
500