IXSH35N140A IXYS, IXSH35N140A Datasheet

IGBT 1400V 70A SCSOA TO-247

IXSH35N140A

Manufacturer Part Number
IXSH35N140A
Description
IGBT 1400V 70A SCSOA TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXSH35N140A

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1400V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 35A
Current - Collector (ic) (max)
70A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1400
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
35
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Igbt, (ns)
400
Eoff, Typ, Tj=125°c, Igbt, (mj)
9.5
Rthjc, Max, Igbt, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXSH35N140A
Manufacturer:
NXP
Quantity:
5 000
© 2003 IXYS All rights reserved
High Voltage,
High speed IGBT
Short Circuit SOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
I
I
V
CM
C25
C90
CES
GES
SC
JM
GEM
J
stg
CES
CGR
GES
C
GE(th)
CE(sat)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
V
R
T
Mounting torque
Test Conditions
I
V
V
V
I
C
C
C
C
C
GE
GE
C
GE
J
J
CE
CE
G
= 22 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 4 mA, V
= 1400 V
= 0 V
= 0 V, V
= I
C90
, V
GE
GE
J
CE
= 125°C, R
CE
= 15 V
= ±20 V
= 840 V, T
= V
GE
GE
G
= 1 MW
J
= 22 Ω
= 125°C
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
min.
4.5
IXSH 35N140A
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
I
typ.
3.4
CM
@ 960
= 70
±20
±30
140
300
150
300
1400
1400
70
35
10
6
max.
±100
6.5
50
2
4
mA
µs
°C
°C
°C
°C
µA
nA
W
V
V
V
V
A
A
A
A
V
g
V
V
Features
Applications
Advantages
1400 V
International standard package
JEDEC TO-247
High frequency IGBT with guaranteed
Short Circuit SOA capability
Fast Fall Time for switching speeds
up to 20 kHz
2nd generation HDMOS
Low V
- for minimum on-state conduction
MOS Gate turn-on
- drive simplicity
AC motor speed control
DC servo and robot drive
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Welding
Easy to mount with 1 screw
(isolated mounting screw hole)
High power density
V
G = Gate,
E = Emitter,
losses
TO-247 AD
CES
CE(sat)
G
C
E
70 A
I
C25
C = Collector,
TAB = Collector
TM
DS92716I(06/03)
process
V
4 V
CE(sat)

Related parts for IXSH35N140A

IXSH35N140A Summary of contents

Page 1

... GE(th 1400 V CES ±20 V GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXSH 35N140A Maximum Ratings 1400 = 1 MW 1400 GE ±20 ± 140 = 22 Ω 960 = 125° 300 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 6 300 Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 2

... V = 960 off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 3000 235 ...

Page 3

... Deg 17V GE 15V 60 13V Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em iiter voltage Volts GE © 2003 IXYS All rights reserved 180 160 11V 140 120 100 1.5 1.4 11V 1.3 1.2 9V 1.1 0.9 0.8 7V 0.7 0 120 T = 25ºC J 100 I = 70A C 35A 17. ...

Page 4

... 25º 25º Amperes C Fig. 11. Gate Charge 700V 35A 10mA nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 100 120 off 10000 1000 100 10 80 100 120 ...

Page 5

... IXYS All rights reserved Fig The Puls e W idth - millis ec onds IXSH 35N140A ...

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