IXGH17N100U1 IXYS, IXGH17N100U1 Datasheet - Page 4

• Manufacturer Part Number: IXGH17N100U1
• Description: IGBT HI SPEED 1000V 34A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH17N100U1

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 17A
• Current - Collector (ic) (max): 34A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 34
• Ic90, Tc=90°c, Igbt, (a): 17
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 750
• Eoff, Typ, Tj=125°c, Igbt, (mj): 8
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 17
• Rthjc, Max, Diode, (ºc/w): 1.0
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
2000
1750
1500
1250
1000
0.01
750
500
250
0.1
15
13
11
0.0001
9
7
5
3
1
0
1
0
0
Fig.7 Gate Charge
Fig.9 Capacitance Curves
Fig.10 Transient Thermal Impedance
D=0.05
D=0.02
D=0.5
D=0.2
D=0.1
Single Pulse
C
10 20 30 40 50 60 70 80 90 100
res
V
I
I
C
G
CE
D=0.01
= 17A
= 10mA
5
= 800
f = 1MHz
C
oes
Gate Charge - (nC)
C
ies
10
V
CE
0.001
- Volts
15
20
25
0.01
Pulse Width - Seconds
4,835,592
4,850,072
0.01
100
0.1
10
0.1
1
Fig.8 Turn-Off Safe Operating Area
0
4,881,106
4,931,844
D = Duty Cycle
T
dV/dt < 3V/ns
200
J
= 125°C
17N100g2.JNB
5,017,508
5,034,796
400
V
CE
IXGH 17N100U1
IXGH 17N100AU1
1
- Volts
5,049,961
5,063,307
600
5,187,117
5,237,481
800
1000
5,486,715
5,381,025
10