IRGIB7B60KDPBF International Rectifier, IRGIB7B60KDPBF Datasheet

IGBT ULTRA FAST 600V 12A TO220FP

IRGIB7B60KDPBF

Manufacturer Part Number
IRGIB7B60KDPBF
Description
IGBT ULTRA FAST 600V 12A TO220FP
Manufacturer
International Rectifier
Datasheets

Specifications of IRGIB7B60KDPBF

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 8A
Current - Collector (ic) (max)
12A
Power - Max
39W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
12A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
39W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGIB7B60KDPBF
www.irf.com
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
Absolute Maximum Ratings
V
I
I
I
I
I
I
I
V
V
P
P
T
T
Thermal / Mechanical Characteristics
R
R
R
R
Wt
C
C
CM
LM
F
F
FM
J
STG
CES
ISOL
GE
D
D
θJC
θJC
θCS
θJA
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
c
G
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
–––
E
C
IRGIB7B60KD
10 lbf·in (1.1 N·m)
-55 to +175
TO-220AB
FullPak
Max.
2500
Typ.
0.50
±20
600
–––
–––
–––
8.0
9.0
6.0
2.0
12
24
24
18
39
20
V
I
t
V
C
sc
CES
CE(on)
= 8.0A, T
> 10µs, T
= 600V
typ. = 1.8V
Max.
–––
–––
3.8
6.0
62
C
J
=100°C
=150°C
09/17/03
Units
Units
°C/W
°C
W
V
A
V
g
1

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IRGIB7B60KDPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. ...

Page 2

IRGIB7B60KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance ...

Page 3

T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 10 1 0.1 0. 100 V ...

Page 4

IRGIB7B60KD 18V 35 VGE = 15V VGE = 12V 30 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics ...

Page 5

V GE (V) Fig Typical -40° ...

Page 6

IRGIB7B60KD 600 500 400 E OFF 300 200 E ON 100 (A) Fig Typ. Energy Loss vs 150°C; L=1.1mH 50Ω 700 600 500 ...

Page 7

I F (A) Fig Typical Diode 150° 100 200 300 di F ...

Page 8

IRGIB7B60KD 1000 Cies Coes 100 Cres (V) Fig. 22- Typ. Capacitance vs 0V 1MHz GE 8 250 470Ω 200 150 Ω 150 50 Ω 100 ...

Page 9

D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-6 1E-5 Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 1 0.10 0.05 0.02 0.1 0.01 ...

Page 10

IRGIB7B60KD 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver Fig.C.T.3 - S.C.SOA Circuit 10 L VCC 80 V DUT 360V DC DUT DUT Rg Fig.C.T.5 - Resistive Load Circuit L + DUT - Rg ...

Page 11

Eof f Loss -100 -200 0 0.2 0.4 Time (uS) Fig. WF1- Typ. Turn-off Loss Waveform @ T = 150°C using Fig. CT.4 J 100 -100 -200 -300 ...

Page 12

IRGIB7B60KD Package Outline Dimensions are shown in millimeters (inches) Notes : T his part marking information applies to all devices produced before 02/26/2001 and currently for parts manufactured in GB. EXAMPLE: T HIS IS AN IRFI840G WIT H ASS EMBLY ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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