IRG7PH42UD-EP International Rectifier, IRG7PH42UD-EP Datasheet - Page 3

• Manufacturer Part Number: IRG7PH42UD-EP
• Description: IGBT 1200V 85A W/DIODE TO-247AD
• Manufacturer: International Rectifier

Specifications of IRG7PH42UD-EP

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 85A
• Power - Max: 320W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AD
• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 85
• Ic @ 100c (a): 45
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 3.29
• Ets Max (mj): 3.8
• Vf Typ: 2.00
• Pd @25c (w): 320
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 1 - Maximum DC Collector Current vs.
1000
100
100
0.1
80
60
40
20
10
0
1
T
25
1
C
60
50
40
30
20
10
Tc = 25°C
Tj = 150°C
Single Pulse
= 25°C, T
0
0.1
Fig. 3 - Forward SOA
50
Case Temperature
Square wave:
10
75
J
DC
60% of rated
≤
Ideal diodes
I
V CE (V)
150°C; V
T C (°C)
voltage
100
100
125
GE
1000
Fig. 1 - Typical Load Current vs. Frequency
=15V
100µsec
1msec
150
10µsec
IRG7PH42UDPbF/IRG7PH42UD-EP
10000
1
175
(Load Current = I
f , Frequency ( kHz )
RMS
of fundamental)
1000
100
350
300
250
200
150
100
10
50
Fig. 2 - Power Dissipation vs. Case
1
0
10
0
10
Fig. 4 - Reverse Bias SOA
T
20
J
= 150°C; V
40
Temperature
For both:
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 95W
100
60
V CE (V)
T C (°C)
GE
80
= 20V
1000
100 120 140 160
100
10000
3