IRGPS40B120UPBF International Rectifier, IRGPS40B120UPBF Datasheet - Page 7

• Manufacturer Part Number: IRGPS40B120UPBF
• Description: IGBT ULT FAST 1200V 80A SUPER247
• Manufacturer: International Rectifier

Specifications of IRGPS40B120UPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.71V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Power - Max: 595W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 80A
• Collector Emitter Voltage Vces: 3.5V
• Power Dissipation Pd: 595W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: TO-274AA
• No. Of Pins: 3
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGPS40B120UPBF

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10000
0.01
1000
0.1
100
10
10
1
1E-005
Fig. 16- Typ. Capacitance vs. V
0
D = 0.50
Fig 18. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
0.05
0.01
0.02
0.10
0.20
V
20
GE
= 0V; f = 1MHz
40
0.0001
V CE (V)
SINGLE PULSE
( THERMAL RESPONSE )
60
Cies
Coes
Cres
t 1 , Rectangular Pulse Duration (sec)
CE
80
0.001
100
Fig. 17 - Typical Gate Charge vs. V
16
14
12
10
8
6
4
2
0
0
0.01
IRGPS40B120UP
50
I
CE
Q G , Total Gate Charge (nC)
100 150 200 250 300 350 400
= 40A; L = 600µH
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
600V
800V
GE
7
1