IRG4PF50WDPBF International Rectifier, IRG4PF50WDPBF Datasheet - Page 7

• Manufacturer Part Number: IRG4PF50WDPBF
• Description: IGBT W/DIODE 900V 51A TO247AC
• Manufacturer: International Rectifier
• Type: Warpr

Specifications of IRG4PF50WDPBF

• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 28A
• Current - Collector (ic) (max): 51A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 3300 pF
• Current, Collector: 51 A
• Energy Rating: 3.97 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 20 to 100 kHz
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 900 V
• Voltage, Collector To Emitter, Saturation: 2.74 V
• Dc Collector Current: 51A
• Collector Emitter Voltage Vces: 900V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 900V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PF50WDPBF

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Fig. 14 - Typical Reverse Recovery vs. di
Fig. 16 - Typical Stored Charge vs. di
1200
900
600
300
300
200
100
0
0
100
100
V = 200 V
T = 125°C
T = 25°C
R
J
J
I = 8.0A
I = 32A
I = 16A
F
F
F
di /dt - (A /µ s)
di /d t - (A /µ s)
f
f
I = 32A
V = 20 0V
T = 125°C
T = 25°C
F
R
J
J
I = 16A
F
I = 8.0A
F
f
/dt
f
/dt
1000
1000
Fig. 15 - Typical Recovery Current vs. di
1000
100
40
30
20
10
10
0
100
100
Fig. 17 - Typical di
V = 2 00V
T = 125 °C
T = 25°C
V = 20 0V
T = 12 5°C
T = 25 °C
R
J
J
I = 8.0A
R
J
J
F
IRG4PF50WD
I = 16A
I = 8 .0A
F
F
di /d t - (A /µ s)
di /dt - (A /µ s)
I = 32A
I =1 6A
F
f
F
f
(rec)M
I = 32 A
F
/dt vs. di
f
/dt
f
/dt
1000
1000
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