IRG4PC50UD-EPBF International Rectifier, IRG4PC50UD-EPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PC50UD-EPBF
• Description: IGBT ULT FAST 600V 55A TO-247-3
• Manufacturer: International Rectifier

Specifications of IRG4PC50UD-EPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 27A
• Current - Collector (ic) (max): 55A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Type: IGBT
• Dc Collector Current: 55A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 55
• Ic @ 100c (a): 27
• Vce(on)@25c Typ (v): 1.65
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 1.58
• Ets Max (mj): 1.9
• Qrr Typ Nc 25c: 112
• Qrr Max Nc 25c: 375
• Vf Typ: 1.30
• Pd @25c (w): 200
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4PC50UD-EPBF

IRG4PC50UDPbF
Electrical Characteristics @ T
Switching Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
d(off)
f
d(on)
d(off)
f
rr
r
r
rr
fe
E
on
off
ts
ts
(BR)CES
CE(on)
GE(th)
ies
oes
res
FM
g
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage ----
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
---- 4000 ----
----
----
----
----
----
----
----
----
----
----
3.0
16
0.60
1.65
0.99
0.59
1.58
180
140
240
130
250
105
112
420 1200
250
160
----
----
-13
----
---- 6500
---- ±100
2.0
1.6
1.3
1.2
2.3
4.5
8.0
24
25
61
46
25
74
44
27
13
52
50
250
270
230
110
160
375
----
----
----
----
---- mV/°C V
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
2.0
6.0
1.7
1.5
1.9
38
90
75
10
15
V/°C
A/µs T
µA
nA
nC
mJ
mJ
nH
nC
V
V
V
ns
ns
pF
ns
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 27A
= 55A
= 27A, T
= 25A
= 25A, T
= 27A
= 25°C
= 27A, V
= 27A, V
= 25°C
= 125°C
= 150°C,
= 25°C See Fig.
= 125°C
= 25°C See Fig.
= 125°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 15V, R
= 15V, R
= 0V
= 0V, V
= ±20V
= 400V
= 15V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
= 150°C
= 150°C
C
C
CE
See Fig.
= 1.0mA
= 250µA
G
G
Conditions
Conditions
C
= 250µA
= 250µA
= 480V
See Fig. 9, 10, 11, 18
= 480V
= 600V, T
= 5.0Ω
= 5.0Ω
= 600V
= 27A
14
15
16
See Fig. 8
See Fig. 7
I
di/dt 200A/µs
www.irf.com
See Fig. 2, 5
See Fig. 13
V
F
J
GE
= 25A
V
= 150°C
R
= 15V
= 200V