IXSH20N60B2D1 IXYS, IXSH20N60B2D1 Datasheet
IXSH20N60B2D1
Manufacturer Part Number
IXSH20N60B2D1
Description
IGBT HS W/DIODE 600V 35A TO247
Manufacturer
IXYS
Datasheet
1.IXSH20N60B2D1.pdf
(6 pages)
Specifications of IXSH20N60B2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 16A
Current - Collector (ic) (max)
35A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
35A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
35
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
126
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.97
Rthjc, Max, Igbt, (k/w)
0.66
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSH20N60B2D1
Manufacturer:
IXYS
Quantity:
15 500
High Speed IGBT
Short Circuit SOA Capability
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
© 2004 IXYS All rights reserved
Symbol
BV
V
I
I
V
C25
C110
F(110)
CM
SC
CES
GES
CGR
J
JM
stg
CES
GES
GEM
C
GE(th)
CE(sat)
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
V
R
T
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
GE
G
CE
GE
CE
= 82 Ω, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 250 µA, V
= 750 µA, V
= V
= 0 V
= 0 V, V
= 16A, V
CES
J
CE
GE
= 125°C, R
GE
= 360 V, T
= ± 20 V
GE
= 15 V
CE
= 0 V
= V
GE
GE
= 1 MΩ
G
J
= 125°C
= 82Ω
(T
J
IXSH 20N60B2D1
= 25°C, unless otherwise specified)
T
J
= 125°C
min.
600
3.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
= 32
± 20
± 30
190
600
600
150
300
260
35
20
21
60
CES
10
D1
2
max.
± 100
0.6
2.5
6.5
85
µs
°C
°C
°C
°C
°C
mA
W
µA
nA
V
V
V
V
A
A
A
A
A
g
V
V
V
TO-247 (IXSH)
Features
• International standard package
• Guaranteed Short Circuit SOA
• Low V
• High current handling capability
• MOS Gate turn-on
• Fast fall time for switching speeds
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
capability
- for low on-state conduction losses
- drive simplicity
up to 20 kHz
G = Gate
E = Emitter
V
I
V
G
CE(sat)
C25
C
CES
CE(sat)
E
C = Collector
TAB = Collector
= 600 V
= 35 A
= 2.5 V
DS99174(10/04)
Related parts for IXSH20N60B2D1
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXSH20N60B2D1 Summary of contents
Page 1
... 750 µ GE(th CES CE CES ± GES 16A CE(sat © 2004 IXYS All rights reserved IXSH 20N60B2D1 Maximum Ratings 600 = 1 MΩ 600 GE ± 20 ± 82Ω 0.8 V CES = 125° 190 -55 ... +150 150 -55 ... +150 300 260 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 2
... V = 100 -di/dt = 100 A/µ thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. 3.5 7.0 800 ...
Page 3
Fig. 1. Output Characte ristics º 17V GE 28 15V 0.5 1 1 Volts C E Fig. 3. Output Characteristics º @ 125 ...
Page 4
Fig. 7. Transconductance º - º º 4 125 Amperes C Fig. 9. Dependence of Turn-Off Energy Los ...
Page 5
Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature 300 t d(off) 280 - - - - - t fi 260 R = 10Ω 240 32A 15V 220 ...
Page 6
=150° =100° 25° Fig. 1. Forward current I versus 2 ...