IRG4PC30UDPBF International Rectifier, IRG4PC30UDPBF Datasheet
IRG4PC30UDPBF
Specifications of IRG4PC30UDPBF
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IRG4PC30UDPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution ...
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IRG4PC30UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage ---- (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold ...
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Fig Typical Load Current vs. Frequency ° ...
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IRG4PC30UD (° Fig Maximum ...
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IRG4PC30UD 2 150° 480V 15V 1 1.2 0.8 0.4 0 Collector-to-Emitter Current ( Fig Typical Switching ...
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° ° ...
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IRG4PC30UD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) ...
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µ www.irf.com ...
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IRG4PC30UD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single shot. 1 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...