IRG4PH40UPBF International Rectifier, IRG4PH40UPBF Datasheet - Page 3
![IGBT UFAST 1200V 30A TO247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRG4PH40UPBF
Manufacturer Part Number
IRG4PH40UPBF
Description
IGBT UFAST 1200V 30A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Specifications of IRG4PH40UPBF
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 21A
Current - Collector (ic) (max)
41A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
1800 pF
Current, Collector
41 A
Energy Rating
270 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.97 V
Dc Collector Current
41A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
41A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4PH40UPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PH40UPBF
Manufacturer:
IR
Quantity:
3 400
www.irf.com
100
10
5 0
4 0
3 0
2 0
1 0
Fig. 2 - Typical Output Characteristics
1
0
0.1
1
T = 150 C
J
S q u a re wave :
V
CE
o
6 0 % o f ra te d
, Collector-to-Emitter Voltage (V)
Id e a l d io de s
T = 25 C
I
J
vo l ta g e
o
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
= 15V
(Load Current = I
1
f, Frequency (kHz)
10
RMS
of fundamental)
100
10
Fig. 3 - Typical Transfer Characteristics
F o r b o th :
D uty c yc le: 50%
T = 125°C
T
G ate driv e as spec ified
P o w e r D is s ip a tio n = 3 5 W
1
J
s ink
5
= 90°C
T = 150 C
J
IRG4PH40UPbF
V
GE
6
1 0
, Gate-to-Emitter Voltage (V)
o
T = 25 C
J
7
T ria n g u la r w a ve :
o
V
5µs PULSE WIDTH
8
CC
C la m p vo l ta g e :
8 0 % o f ra te d
= 50V
I
9
3
1 0 0
10
A