IRGS4056DPBF International Rectifier, IRGS4056DPBF Datasheet
IRGS4056DPBF
Specifications of IRGS4056DPBF
Available stocks
Related parts for IRGS4056DPBF
IRGS4056DPBF Summary of contents
Page 1
... JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) θ Thermal Resistance, Case-to-Sink (flat, greased surface) θ Thermal Resistance, Junction-to-Ambient (typical socket mount) θ n-channel G Gate Parameter e Parameter IRGS4056DPbF V = 600V CES I = 12A 100° ≥ 5µ 175°C SC J(max) V typ. = 1.55V CE(on Pak ...
Page 2
... IRGS4056DPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...
Page 3
... DC 1000 10000 =15V 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8. Fig Typ. IGBT Output Characteristics IRGS4056DPbF 100 120 140 160 180 T C (°C) Fig Power Dissipation vs. Case Temperature 100 100 V CE (V) Fig Reverse Bias SOA T = 175° ...
Page 4
... IRGS4056DPbF 18V 40 VGE = 15V 35 VGE = 12V VGE = 10V 30 VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = 175° 80µ (V) Fig Typical -40° (V) Fig Typical 175° Fig Typ. Diode Forward Characteristics 6. 12A 24A 12A 24A -40°c 50 25°C 175° ...
Page 5
... I F (A) Fig Typ. Diode 175°C J www.irf.com 22Ω 15V T = 175° 200µ 100 125 175° 200µ 12A 15V vs IRGS4056DPbF 1000 td OFF 100 (A) Fig Typ. Switching Time vs 400V 22Ω 1000 td OFF 100 100 R G (Ω) Fig Typ. Switching Time vs 400V 12A ...
Page 6
... IRGS4056DPbF 500 di F /dt (A/µs) Fig Typ. Diode 400V 15V 12A 400 10Ω 350 22Ω 300 47Ω 250 200 150 100Ω 100 (A) Fig Typ. Diode 175°C J 10000 1000 100 (V) Fig Typ. Capacitance vs 0V 1MHz GE 6 1000 1500 vs 175° ...
Page 7
... J τ J τ τ τ 1 τ τ τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) IRGS4056DPbF Ri (°C/W) τi (sec 0.358 0.000171 τ C τ 0.424 0.001361 3 τ 3 0.287 0.009475 Notes: 1. Duty Factor D = t1/t2 2. Peak Zthjc + Tc 0 (°C/W) τi (sec) 3 0.821094 0.000233 τ ...
Page 8
... IRGS4056DPbF Fig.C.T.1 - Gate Charge Circuit (turn-off) 4x DUT Fig.C.T.3 - S.C. SOA Circuit R = DUT Rg Fig.C.T.5 - Resistive Load Circuit clamp / DU T 360V VCC G force 80V Rg Fig.C.T.2 - RBSOA Circuit RIVER Rg Fig.C.T.4 - Switching Loss Circuit C force 400µH D1 10K C sense DUT 0.0075µ E sense E force Fig.C.T.6 - BVCES Filter Circuit www ...
Page 9
... Fig. WF3 - Typ. Diode Recovery Waveform @ T = 175°C using Fig. CT.4 J www.irf.com 1.50 2.00 Fig. WF2 - Typ. Turn-on Loss Waveform 10% Peak I RR 0.15 IRGS4056DPbF 500 400 tr 300 TEST C 200 90% test 100 10% test -100 11.70 11.80 11.90 12.00 12.10 Time (µ ...
Page 10
... IRGS4056DPbF 2 2 UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃ ...
Page 11
... Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 11/2008 IRGS4056DPbF 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 15.42 (.609) 23 ...