IRGB30B60KPBF International Rectifier, IRGB30B60KPBF Datasheet - Page 6

• Manufacturer Part Number: IRGB30B60KPBF
• Description: IGBT 600V 78A TO220AB
• Manufacturer: International Rectifier

Specifications of IRGB30B60KPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.35V @ 15V, 30A
• Current - Collector (ic) (max): 78A
• Power - Max: 370W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 78A
• Collector Emitter Voltage Vces: 2.35V
• Power Dissipation Pd: 370W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB30B60KPBF

IRGB/S/SL30B60KPbF
6
3000
2500
2000
1500
1000
500
0
3000
2500
2000
1500
1000
Fig. 14 - Typ. Energy Loss vs. R
T
500
0
J
0
= 150°C; L=200µH; V
T
Fig. 12 - Typ. Energy Loss vs. I
0
J
= 150°C; L=200µH; V
I
CE
25
= 30A; V
R
E OFF
G
= 10Ω; V
20
50
E OFF
R G ( Ω )
GE
= 15V
I C (A)
GE
40
E ON
75
CE
= 15V
= 400V
E ON
CE
= 400V,
100
60
G
C
125
80
10000
1000
1000
100
100
10
10
Fig. 13 - Typ. Switching Time vs. I
0
0
T
Fig. 15 - Typ. Switching Time vs. R
J
td ON
t R
T
= 150°C; L=200µH; V
J
td OFF
= 150°C; L=200µH; V
t F
R
25
td OFF
G
I
20
td ON
CE
= 10Ω; V
t R
= 30A; V
50
R G ( Ω )
I C (A)
40
GE
GE
= 15V
75
= 15V
CE
CE
= 400V
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60
= 400V
100
t F
C
G
125
80