IRGB4B60KD1PBF International Rectifier, IRGB4B60KD1PBF Datasheet - Page 2

• Manufacturer Part Number: IRGB4B60KD1PBF
• Description: IGBT W/DIODE 600V 11A TO220AB
• Manufacturer: International Rectifier

Specifications of IRGB4B60KD1PBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 4A
• Current - Collector (ic) (max): 11A
• Power - Max: 63W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB4B60KD1PBF

V
∆V
V
V
∆V
gfe
I
V
I
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
E
t
I
Note 
Electrical Characteristics @ T
Switching Characteristics @ T
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
tot
on
off
tot
ies
oes
res
rec
g
ge
gc
(BR)CES
GE(th)
IRGB/S/SL4B60KD1PbF
2
/∆T
/∆T
to
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
ƒ
are on page 16
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
0.28
-8.1
136
722
120
100
130
220
120
190
2.1
2.5
2.6
4.5
1.7
1.0
1.4
1.3
1.2
1.7
6.5
6.2
6.3
12
73
47
22
18
66
83
22
18
79
25
81
93
—
—
—
2400
±100
150
600
130
110
150
140
280
130
100
2.5
2.8
2.9
5.5
2.0
1.8
1.7
7.9
80
53
28
23
80
27
22
89
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C V
nC V
µA
nA
pF
µJ
ns
µJ
ns
µs
µJ
ns
V
V
V
S
V
A
V
I
I
I
V
V
V
V
V
I
I
I
V
I
V
I
V
T
I
V
T
I
V
T
I
V
T
V
V
f = 1.0MHz
T
V
T
V
T
V
V
C
C
C
F
F
F
C
C
C
C
C
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
CC
GE
= 4.0A
= 4.0A, T
= 4.0A, T
= 4.0A, V
= 4.0A, V
= 4.0A, V
= 4.0A
= 4.0A, V
= 4.0A, V
= 4.0A, V
= 4.0A, V
= 25°C
= 25°C
= 150°C
= 150°C
= 150°C, I
= 150°C, Vp = 600V, R
= 150°C
=500V,V
=360V,V
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V, R
= 15V, R
= 15V, R
= 15V, R
= 0V
= 30V
= 400V, I
= 15V, R
Conditions
= 15V
GE
GE
, I
, I
C
C
J
J
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
CE
C
GE
GE
= 500µA
= 1mA (25°C-150°C)
= 150°C
= 175°C
C
G
G
G
G
G
F
= 250µA
= 1mA (25°C-150°C)
= 4.0A, PW = 80µs
Conditions
= 400V
= 400V
= 400V
= 400V
= 15V, T
= 15V, T
= 15V, T
= 600V
= 600V, T
= 600V, T
= 22A, Vp = 600V
= 100Ω, L = 2.5mH
= 100Ω, L = 2.5mH
= 100Ω, L = 2.5mH
= 100Ω, L = 2.5mH
= 100Ω
= 4.0A, L = 2.5mH
= +15V to 0V,R
= +15V to 0V
J
J
J
= 25°C
= 150°C
= 175°C
J
J
G
= 150°C
= 175°C
www.irf.com
= 100Ω
G
= 100Ω
Ref.Fig.
Ref.Fig.
WF1,WF2
CT4,WF3
17,18,19
9,10,11
9,10,11
13,15
14,16
20,21
5,6,7
WF1
WF2
WF4
CT1
CT4
CT4
CT4
CT4
CT2
CT3
12
23
22
8
4