IRGB6B60KDPBF International Rectifier, IRGB6B60KDPBF Datasheet - Page 9

• Manufacturer Part Number: IRGB6B60KDPBF
• Description: IGBT W/DIODE 600V 13A TO220AB
• Manufacturer: International Rectifier

Specifications of IRGB6B60KDPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 5A
• Current - Collector (ic) (max): 13A
• Power - Max: 90W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 13A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 90W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB6B60KDPBF

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0.001
0.001
0.01
0.01
0.1
0.1
10
10
1
1
1E-6
1E-6
D = 0.50
D = 0.50
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
0.10
0.05
0.01
0.02
0.20
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0.05
0.20
0.10
0.01
0.02
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
1E-5
1E-5
IRGB6B60KDPbF/IRGS/SL6B60KD
1E-4
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
1E-4
τ
1E-3
τ
J
J
τ
τ
J
τ
J
τ
1
Ci= τi/Ri
1
Ci= τi/Ri
τ
τ
1
Ci= i/Ri
1
Ci= i/Ri
R
R
1
R
1
R
1E-3
1
1
τ
τ
2
2
R
τ
R
τ
2
2
2
R
2
R
1E-2
2
2
R
τ
R
τ
3
3
3
R
3
τ
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
3
3
3
3
τ
τ
C
C
τ
τ
Ri (°C/W)
Ri (°C/W)
1.194
2.424
0.753
0.708
0.447
0.219
1E-2
1E-1
0.01037
0.000172
0.001517
0.080325
0.00022
0.00089
τi (sec)
τi (sec)
1E+0
9
1E-1