MBRS360BT3G ON Semiconductor, MBRS360BT3G Datasheet - Page 3

• Manufacturer Part Number: MBRS360BT3G
• Description: DIODE SCHOTTKY 60V 3A SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS360BT3G

• Voltage - Forward (vf) (max) @ If: 740mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 150µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 4 A
• Max Surge Current: 125 A
• Configuration: Single
• Forward Voltage Drop: 0.74 V @ 3 A
• Maximum Reverse Leakage Current: 150 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
25
45
SQUARE WAVE
Figure 5. Current Derating
T
I
I
65
L
PK
PK
I
I
PK
PK
, LEAD TEMPERATURE (°C)
/I
/I
/I
/I
dc
O
O
O
O
= 10
= 20
= p
= 5
85
1000
105
100
10
0
125
freq = 20 kHz
10
145
Figure 7. Typical Capacitance
http://onsemi.com
20
V
R
, REVERSE VOLTAGE (V)
165
30
3
3.5
2.5
1.5
0.5
40
4
3
2
1
0
0
T
J
0.5
50
= 175°C
Figure 6. Forward Power Dissipation
I
O
, AVERAGE FORWARD CURRENT (A)
1
T
J
60
= 25°C
1.5
70
2
2.5
3
SQUARE
3.5
WAVE
4
4.5
dc
5