MBRS540T3G ON Semiconductor, MBRS540T3G Datasheet - Page 3

• Manufacturer Part Number: MBRS540T3G
• Description: DIODE SCHOTTKY 40V 5A SMC
• Manufacturer: ON Semiconductor

Specifications of MBRS540T3G

• Voltage - Forward (vf) (max) @ If: 500mV @ 5A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 300µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 5 A
• Max Surge Current: 190 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 300 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: SMD/SMT
• Current, Forward: 5 A
• Current, Reverse: 15 mA
• Current, Surge: 190 A
• Package Type: SMC
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -65 to +150 °C
• Voltage, Forward: 0.5 V
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRS540T3GOSTR

1000
100
9
8
7
6
5
4
3
2
1
0
0
25
SQUARE WAVE
I
I
I
I
pk
pk
pk
pk
dc
/I
/I
/I
5
/I
O
O
O
O
= 10
45
= 20
= p
= 5
10
T
Figure 5. Current Derating
V
Figure 7. Capacitance
L
R
, LEAD TEMPERATURE (°C)
, REVERSE VOLTAGE (V)
65
15
20
85
25
105
TYPICAL CHARACTERISTICS
30
freq = 20 kHz
T
J
125
= 25 °C
35
http://onsemi.com
MBRS540T3
40
145
3
125
115
105
4.5
3.5
2.5
1.5
0.5
95
85
75
65
55
4
3
2
1
0
0
0
Figure 8. Typical Operating Temperature
1
5
Figure 6. Forward Power Dissipation
R
I
O
qJA
, AVERAGE FORWARD CURRENT (A)
10
2
V
= 81 °C/W
R
, DC REVERSE VOLTAGE (V)
R
qJA
15
3
= 111 °C/W
I
pk
Derating
/I
20
4
O
= 20
25
5
I
pk
R
qJA
/I
SQUARE
O
WAVE
30
6
= 10
= 136 °C/W
I
pk
R
R
/I
qJA
qJA
O
35
7
= 5
I
= 12 °C/W
= 47 °C/W
pk
/I
dc
O
40
8
= p
45
9