MBRS140T3G ON Semiconductor, MBRS140T3G Datasheet - Page 3

DIODE SCHOTTKY 40V 1A SMB

MBRS140T3G

Manufacturer Part Number
MBRS140T3G
Description
DIODE SCHOTTKY 40V 1A SMB
Manufacturer
ON Semiconductor
Datasheets

Specifications of MBRS140T3G

Voltage - Forward (vf) (max) @ If
600mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
40 A
Configuration
Single
Forward Voltage Drop
0.6 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Current, Forward
1 A
Current, Reverse
10 mA
Current, Surge
40 A
Package Type
SMB
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-65 to +125 °C
Voltage, Forward
0.6 V
Voltage, Reverse
40 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRS140T3GOSTR

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10
9
8
7
6
5
4
3
2
1
0
30
40
50
Figure 4. Current Derating (Case)
60
SQUARE WAVE
T
C
, CASE TEMPERATURE (°C)
70
200
180
160
140
120
100
80
80
60
40
20
0
0
RATED VOLTAGE APPLIED
90
4
DC
R
qJC
T
100
J
= 125°C
= 12°C/W
8
Figure 3. Typical Capacitance
110
V
12
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
120
MBRS140T3
16
130
NOTE: TYPICAL CAPACITANCE
20
3
24
AT 0 V = 160 pF
5
4
3
2
1
0
0
CAPACITANCE
T
28
J
I
I
PK
AV
= 125°C
LOAD
=
I
32
F(AV)
20
1
Figure 5. Power Dissipation
, AVERAGE FORWARD CURRENT (AMPS)
36
10
40
2
5
3
π
SQUARE
WAVE
4
DC
5

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