MBRS1100T3G ON Semiconductor, MBRS1100T3G Datasheet
MBRS1100T3G
Specifications of MBRS1100T3G
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MBRS1100T3G Summary of contents
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MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay ...
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... J 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device MBRS1100T3 MBRS1100T3G MBRS190T3 MBRS190T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MBRS1100T3, MBRS190T3 Symbol = 25° ...
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TYPICAL ELECTRICAL CHARACTERISTICS 150° 100°C 1 0.5 25°C 0.2 0.1 0.05 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 INSTANTANEOUS VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...