MBR120VLSFT1G ON Semiconductor, MBR120VLSFT1G Datasheet - Page 4

• Manufacturer Part Number: MBR120VLSFT1G
• Description: DIODE SCHOTTKY 20V 1A SOD123FL
• Manufacturer: ON Semiconductor

Specifications of MBR120VLSFT1G

• Voltage - Forward (vf) (max) @ If: 340mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 600µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 45 A
• Configuration: Single
• Forward Voltage Drop: 0.34 V
• Maximum Reverse Leakage Current: 600 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: SMD/SMT
• Current, Forward: 1 A
• Current, Reverse: 15 mA
• Current, Surge: 45 A
• Package Type: SOD-123FL
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.34 V
• Voltage, Reverse: 20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR120VLSFT1GOSTR

500
400
300
200
100
1000
100
0.1
0
10
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
T
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
1
0
J
0.000001
may be calculated from the equation:
2
4
V
0.00001
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
0.05
6
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
8
0.0001
10
12
14
0.001
J
J
therefore must include forward and reverse power effects. The allowable operating
due to reverse bias under DC conditions only and is calculated as T
Figure 9. Thermal Response
T
T
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
16
J
J
Test Type > Min Pad < Die Size 38x38 @ 75% mils
= 25°C
= T
MBR120VLSFT1
http://onsemi.com
18
Jmax
t
1
− r(t)(Pf + Pr) where
0.01
, TIME (sec)
20
4
125
120
105
100
115
110
95
90
85
80
75
70
65
0
0.1
324.9°C/W
2.0
Figure 8. Typical Operating Temperature
V
4.0
R
, DC REVERSE VOLTAGE (VOLTS)
1
6.0
400°C/W
8.0
Derating*
130°C/W
10
10
P
12
DUTY CYCLE, D = t
(pk)
qJA = 321.8 °C/W
R
J
235°C/W
qJA
14
= T
Jmax
100
= 25.6°C/W
t
1
t
16
2
− r(t)Pr,
1
18
/t
2
1000
20