BAT54XV2T1 ON Semiconductor, BAT54XV2T1 Datasheet
BAT54XV2T1
Manufacturer Part Number
BAT54XV2T1
Description
DIODE SCHOTTKY DET/SW 30V SOD523
Manufacturer
ON Semiconductor
Datasheet
1.BAT54XV2T1G.pdf
(4 pages)
Specifications of BAT54XV2T1
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
5ns
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOD-523
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BAT54XV2T1OS
BAT54XV2T1OS
BAT54XV2T1OSTR
BAT54XV2T1OS
BAT54XV2T1OSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAT54XV2T1G
Manufacturer:
AKM
Quantity:
13 400
Company:
Part Number:
BAT54XV2T1G
Manufacturer:
ON Semiconductor
Quantity:
167 904
Part Number:
BAT54XV2T1G
Manufacturer:
ON/安森美
Quantity:
20 000
BAT54XV2T1G
Schottky Barrier Diodes
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 6
Reverse Voltage
Total Device Dissipation FR−5 Board,
(Note 1) T
Forward Current (DC)
Non−Repetitive Peak Forward
Current, t
Repetitive Peak Forward Current
Thermal Resistance,
Junction and Storage Temperature
These Schottky barrier diodes are designed for high−speed
Pulse Wave = 1 sec, Duty Cycle = 66%
Compliant
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
p
Derate above 25°C
Junction−to−Ambient
< 10 msec
A
Characteristic
= 25°C
Rating
(T
J
= 125°C unless otherwise noted)
Symbol
Symbol
T
I
R
I
J
FSM
FRM
V
P
, T
I
qJA
F
R
D
F
stg
= 10 mA
−55 to 125
200 Max
Value
Max
1.57
200
600
300
635
30
1
mW/°C
°C/W
Unit
Unit
mW
mA
mA
mA
°C
V
†For information on tape and reel specifications,
BAT54XV2T1G
BAT54XV2T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DETECTOR AND SWITCHING
*Date Code orientation may vary depending
Device
upon manufacturing location.
(Note: Microdot may be in either location)
SILICON HOT−CARRIER
ORDERING INFORMATION
JV
M
G
CATHODE
1
MARKING DIAGRAM
http://onsemi.com
1
1
(Pb−Free)
(Pb−Free)
SOD−523
SOD−523
Package
30 VOLT
DIODES
= Device Code
= Date Code*
= Pb−Free Package
2
Publication Order Number:
JVM G
CASE 502
SOD−523
PLASTIC
G
ANODE
3000 / Tape & Reel
8000 / Tape & Reel
2
Shipping
BAT54XV2T1/D
†
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BAT54XV2T1 Summary of contents
Page 1
... Pb−Free Package G (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOD−523 3000 / Tape & Reel (Pb−Free) SOD−523 8000 / Tape & Reel (Pb−Free) Publication Order Number: BAT54XV2T1/D † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( mA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mA) F Forward Voltage (I = ...
Page 3
V , FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 1000 T = 150°C A ...
Page 4
... E 0.15 0.20 0.25 0.006 0.008 0.010 0.40 0.0157 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAT54XV2T1/D ...