RB520S30T1 ON Semiconductor, RB520S30T1 Datasheet

no-image

RB520S30T1

Manufacturer Part Number
RB520S30T1
Description
DIODE SCHOTTKY 30V 200MA SOD523
Manufacturer
ON Semiconductor
Datasheet

Specifications of RB520S30T1

Voltage - Forward (vf) (max) @ If
600mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
1µA @ 10V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SOD-523
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
RB520S30T1OSCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB520S30T1
Manufacturer:
ATI
Quantity:
62
Part Number:
RB520S30T1G
Manufacturer:
ON
Quantity:
108 000
Part Number:
RB520S30T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
RB520S30T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
RB520S30T1G
0
Company:
Part Number:
RB520S30T1G
Quantity:
4 500
Company:
Part Number:
RB520S30T1G
Quantity:
260
RB520S30T1
Schottky Barrier Diode
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 Minimum Pad.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 8
ELECTRICAL CHARACTERISTICS
Reverse Voltage
Forward Current DC
Total Device Dissipation FR−5 Board,
(Note 1) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Reverse Leakage
Forward Voltage
These Schottky barrier diodes are designed for high−speed
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.6 V (max) @ I
Low Reverse Current
ESD Rating: Class 3B per Human Body Model
These are Pb−Free Devices
(V
(I
F
R
= 200 mA)
= 10 V)
A
= 25°C
Characteristic
Characteristic
Class C per Machine Model
Rating
(T
A
Symbol
= 25°C unless otherwise noted)
Symbol
Symbol
T
V
I
R
R
J
F
V
P
, T
I
qJA
F
R
D
stg
Min Typ Max Unit
−55 to +150
Value
F
Max
1.57
200
200
635
30
= 200 mA
0.60
1.0
1
mW/°C
°C/W
Unit
Unit
Vdc
mW
mA
°C
Vdc
mA
*This package is inherently Pb−Free.
†For information on tape and reel specifications,
*Date Code orientation position may vary depending
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
RB520S30T1
RB520S30T1G
upon manufacturing location.
Device
(Note: Microdot may be in either location)
30 VOLT SCHOTTKY
ORDERING INFORMATION
BARRIER DIODE
CATHODE
MARKING DIAGRAM
5J = Device Code
M = Date Code*
G
http://onsemi.com
1
1
= Pb−Free Package
SOD−523*
SOD−523*
Package
CASE 502
SOD−523
PLASTIC
1
5J M G
Publication Order Number:
G
2
ANODE
2
3000/Tape & Reel
3000/Tape & Reel
2
RB520S30T1/D
Shipping

Related parts for RB520S30T1

RB520S30T1 Summary of contents

Page 1

... SOD−523* 3000/Tape & Reel RB520S30T1G SOD−523* 3000/Tape & Reel *This package is inherently Pb−Free. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: RB520S30T1/D † ...

Page 2

... V , FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage RB520S30T1 0 10 Input 90% Sampling Oscilloscope V R INPUT SIGNAL is equal to 10 mA. R(peak) rr 1000 = 150° 100 10 1.0 0.1 0.01 −55°C ...

Page 3

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative RB520S30T1/D ...

Related keywords