BAS16HT1 ON Semiconductor, BAS16HT1 Datasheet - Page 3

• Manufacturer Part Number: BAS16HT1
• Description: DIODE SWITCH 200MA 75V SOD323
• Manufacturer: ON Semiconductor

Specifications of BAS16HT1

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323, UMD2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BAS16HT1OSCT

+10 V
100
50 Ω OUTPUT
1.0
0.1
GENERATOR
10
0.2
PULSE
820 Ω
0.1 mF
0.4
2.0 k
Figure 2. Forward Voltage
100 mH
V
T
F
, FORWARD VOLTAGE (VOLTS)
A
= 85C
0.6
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
D.U.T.
2. Input pulse is adjusted so I
3. t
T
0.68
0.64
0.56
0.52
0.60
A
0.8
p
Figure 1. Recovery Time Equivalent Test Circuit
= 25C
» t
0
rr
T
A
0.1 mF
OSCILLOSCOPE
= -- 40C
50 Ω INPUT
SAMPLING
1.0
2
http://onsemi.com
V
R
Figure 4. Capacitance
, REVERSE VOLTAGE (VOLTS)
1.2
R(peak)
V
3
R
4
0.001
0.01
t
is equal to 10 mA.
r
1.0
0.1
10
INPUT SIGNAL
10%
90%
0
t
p
6
10
t
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
T
T
F
T
T
A
A
T
A
A
) of 10 mA.
20
A
= 150C
= 125C
8
I
= 55C
= 25C
I
R
F
= 85C
(I
F
30
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
i
R(REC)
= 1.0 mA)
40
= 1.0 mA
t
50