BAS116LT1 ON Semiconductor, BAS116LT1 Datasheet

BAS116LT1

Manufacturer Part Number

BAS116LT1

Description

DIODE SWITCH 200MA 75V SOT23

Manufacturer

ON Semiconductor

Datasheet

1.BAS116LT1G.pdf (3 pages)

Specifications of BAS116LT1

Voltage - Forward (vf) (max) @ If

1.25V @ 150mA

Voltage - Dc Reverse (vr) (max)

75V

Current - Average Rectified (io)

200mA (DC)

Current - Reverse Leakage @ Vr

5nA @ 75V

Diode Type

Standard

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

3µs

Capacitance @ Vr, F

2pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

BAS116LT1OSCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAS116LT1G

Manufacturer:

ON Semiconductor

Quantity:

64 674

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BAS116LT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

BAS116LT1G

Manufacturer:

ON/安森美

Quantity:

20 000

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Download datasheet (114Kb)

BAS116LT1G

Switching Diode

Features

•

August, 2009 − Rev. 6

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

Continuous Reverse Voltage

Peak Forward Current

Peak Forward Surge Current

Total Device Dissipation FR−5 Board (Note 1)

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation

Alumina Substrate (Note 2) T

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

Compliant

Low Leakage Current Applications

Medium Speed Switching Times

Available in 8 mm Tape and Reel

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

= 25°C

Use BAS116LT1 to order the 7 inch/3,000 unit reel

Characteristic

Rating

= 25°C

Symbol

FM(surge)

, T

qJA

stg

−55 to

Value

+150

Max

200

500

225

556

300

417

1.8

2.4

mW/°C

mAdc

°C/W

Unit

Vdc

°C

BAS116LT1G

BAS116LT3G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

CATHODE

ORDERING INFORMATION

JV = Specific Device Code

M = Date Code*

MARKING DIAGRAM

http://onsemi.com

SOT−23 (TO−236AB)

= Pb−Free Package

(Pb−Free)

Package

SOT−23

CASE 318

STYLE 8

JV M G

Publication Order Number:

10000/Tape & Reel

3000/Tape & Reel

Shipping

ANODE

BAS116LT1/D

†

Related parts for BAS116LT1

BAS116LT1 Summary of contents

Page 1

... Features • Low Leakage Current Applications • Medium Speed Switching Times • Available Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Continuous Reverse Voltage ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 mAdc) BR Reverse Voltage Leakage Current ( Vdc) R Reverse Voltage Leakage Current ( Vdc Forward Voltage (I = 1.0 mAdc) F Forward ...

Page 3

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BAS116LT1/D ...

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