MBRS140LT3 ON Semiconductor, MBRS140LT3 Datasheet - Page 4

• Manufacturer Part Number: MBRS140LT3
• Description: DIODE SCHOTTKY 40V 1A SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS140LT3

• Voltage - Forward (vf) (max) @ If: 500mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 400µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: MBRS140LT3OSTR

1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1000
100
10
0
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
T
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
0.00001
0.00001
J
5.0%
2.0%
1.0%
5.0%
2.0%
1.0%
50%
20%
10%
may be calculated from the equation:
50%
20%
10%
5.0
10
V
R
R
R
0.0001
Figure 7. Capacitance
0.0001
tjl(t)
tjl(t)
, REVERSE VOLTAGE (VOLTS)
= R
= R
15
tjl*r(t)
tjl*r(t)
20
Figure 10. Thermal Response, Junction−to−Ambient
0.001
0.001
Figure 9. Thermal Response, Junction−to−Lead
25
30
T
J
J
J
= 25°C
therefore must include forward and reverse power effects. The allowable operating
due to reverse bias under DC conditions only and is calculated as T
T
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
0.01
0.01
J
35
http://onsemi.com
= T
MBRS140LT3
Jmax
t, TIME (s)
t, TIME (s)
40
− r(t)(Pf + Pr) where
4
0.1
0.1
125
105
115
95
85
75
65
Figure 8. Typical Operating Temperature Derating*
0
5.0
1.0
1.0
V
10
R
, DC REVERSE VOLTAGE (VOLTS)
44°C/W
15
10
10
20
63°C/W
25
80°C/W
J
= T
100
100
30
R
Jmax
tja
= 94°C/W
− r(t)Pr,
35
24°C/W
1000
1000
40