BYW29G-200-TR STMicroelectronics, BYW29G-200-TR Datasheet - Page 4

• Manufacturer Part Number: BYW29G-200-TR
• Description: DIODE FAST REC 200V 8A HE D2PAK
• Manufacturer: STMicroelectronics

Specifications of BYW29G-200-TR

• Voltage - Forward (vf) (max) @ If: 1.15V @ 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-3778-2

BYW29/F/FP/G-200
Fig.7 : Junction capacitance versus reverse volt-
age applied (Typical values).
100
Fig.9 : Peak reverse recovery current versus
dIF/dt (90% confidence).
100
4/7
Fig.5-2 : Non repetitive surge peak forward cur-
rent versus overload duration (TO-220FPAC,
ISOWATT220AC).
60
50
40
30
20
10
1.E-03
10
10
0
1
10
IM(A)
1
C(pF)
IRM(A)
I
M
VR=100V
Tj=100°C
IF=8A
=0.5
t
1.E-02
10
dIF/dt(A/µs)
VR(V)
t(s)
100
1.E-01
100
Vosc=30mV
F=1MHz
Tj=25°C
Tc=100°C
Tc=25°C
Tc=75°C
1.E+00
1000
1000
Fig.6 : Average current versus ambient tempera-
ture. ( = 0.5)
10
Fig.8 : Reverse recovery charges versus dI
(90%confidence).
1000
Fig.10 : Dynamic parameters versus junction tem-
perature.
1.50
1.25
1.00
0.75
0.50
0.25
0.00
9
8
7
6
5
4
3
2
1
0
100
10
0
IF(av)(A)
10
0
Qrr; IRM[Tj] / Qrr; IRM[Tj=125°C]
Qrr(nC)
VR=100V
IF=8A
VR=100V
Tj=100°C
IF=8A
25
25
Rth(j-a)=15°C:W
50
Rth(j-a)=Rth(j-c)
50
IRM
QRR
dIF/dt(A/µs)
Tamb(°C)
Tj(°C)
75
100
75
TO-220FPAC
ISOWATT220AC
100
100
TO-220AC/D²PAK
125
125
F
1000
/dt
150
150