CSD04060E Cree Inc, CSD04060E Datasheet - Page 2

• Manufacturer Part Number: CSD04060E
• Description: DIODE SCHOTTKY 600V 4A TO252-2
• Manufacturer: Cree Inc

Specifications of CSD04060E

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 1.8V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 7A
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 220pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Termination Type: SMD
• Junction Temperature, Tj Max: 175°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1.
Typical Performance
Electrical Characteristics
Thermal Characteristics
2
Symbol
Symbol
This is a majority carrier diode, so there is no reverse recovery charge.
0
R
Q
V
I
C
θJC
8
7
6
5
4
3
2
1
0
R
F
C
CSD04060 Rev. Q
1.0 2.0 3.0 4.0
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Parameter
Thermal Resistance from Junction to Case
Figure 1. Forward Characteristics
Typ.
220
1.5
2.0
25
50
26
20
9
Typ.
Max.
2.4
1000
200
1.8
2.4
°C/W
Unit
Unit
nC
μA
pF
100
0
V
90
80
70
60
50
40
30
20
10
0
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 500 A/μs
T
V
V
V
F
F
100 200 300 400 500 600 700
J
R
R
R
R
R
R
= 4 A T
= 4 A T
= 25°C
= 600 V, I
= 0 V, T
= 200 V, T
= 400 V, T
= 600 V T
= 600 V T
Test Conditions
J
J
J
=25°C
=175°C
= 25°C, f = 1 MHz
F
J
J
J
J
= 4A
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
=25°C
=175°C
Note