MA22D3900L Panasonic - SSG, MA22D3900L Datasheet

DIODE SCHOTTKY 1.57ARMS MINI2P

MA22D3900L

Manufacturer Part Number
MA22D3900L
Description
DIODE SCHOTTKY 1.57ARMS MINI2P
Manufacturer
Panasonic - SSG
Datasheets

Specifications of MA22D3900L

Voltage - Forward (vf) (max) @ If
570mV @ 1.5A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1.57A
Current - Reverse Leakage @ Vr
100µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Capacitance @ Vr, F
50pF @ 10V, 1MHz
Mounting Type
Surface Mount
Package / Case
Mini 2P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MA22D3900LTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA22D3900L
Manufacturer:
SHARP
Quantity:
3 400
Part Number:
MA22D3900L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MA22D39
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Features
 Absolute Maximum Ratings
 Absolute Maximum Ratings
Note) * 1: Mounted on an alumina PC board
 Electrical Characteristics
 Electrical Characteristics
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: January 2005
 Optimum for forward current (Effective value) I
 Optimum for forward current (Effective value) I
 Reverse voltage V
 Reverse voltage V
Reverse voltage
Maximum peak reverse voltage
Forward current (Effective value)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Reverse voltage V
Reverse voltage V = 40 V is guaranteed
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
3. * : t
of current from the operating equipment.
rr
rr
rr
measurement circuit
measurement circuit
Parameter
Parameter
R
R
R
R
= 40 V is guaranteed
*
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit (N-50BU)
* 1
T
a
a
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25
= 25
T
* 2
a
a
a
A A
= 25
= 25
°C±3°C
Symbol
I
Symbol
F(RMS)
V
V
V
I
T
T
T
V
°C
FSM
T
T
T
RM
RM
V
V
V
V
V
V
V
V
V
stg
stg
I
C
R
t
t
t
j
j
Wave Form Analyzer
(SAS-8130)
R
R
rr
rr
F1
F1
F2
F2
F3
F3
t
i
F(RMS)
= 50 Ω
–55 to +150
= 1.57 A rectifi cation
Rating
I
I
I
V
V
I
R
R
R = 100
F
F
F
F
1.57
150
L
L
L
L
R
R
R
R
R
R
40
40
30
= 0.5 A
= 1.1 A
= 1.5 A
= I
= 100
= 40 V
= 40 V
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
R
R
R
SKH00141AED
= 100 mA, I
= 100 mA, I
Unit
Conditions
°C
°C
V
V
A
A
V
R
rr
rr
rr
= 10 mA,
= 10 mA,
t
r
Input Pulse
10%
t
t
t = 2 µs
t
δ = 0.05
p
p
r
90%
= 0.35 ns
t
t
t
p
p
Marking Symbol: 3N
1: Anode
2: Cathode
t
I
F
1.6
I
R
Min
F
Output Pulse
L
±0.1
= I
= 100 Ω
1
2
0.55
R
= 100 mA
I
t
rr
rr
±0.1
= 10 mA
Typ
50
30
t
0.45
0.80
±0.1
Mini2-F1 Package
Max
0.48
0.54
0.57
100
±0.05
0.16
Unit: mm
+0.1
–0.06
0 to 0.1
Unit
µA
pF
ns
V
1

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