MA21D3800L Panasonic - SSG, MA21D3800L Datasheet
MA21D3800L
Manufacturer Part Number
MA21D3800L
Description
DIODE SCHOTTKY 30V 1A SMINI-2P
Manufacturer
Panasonic - SSG
Specifications of MA21D3800L
Voltage - Forward (vf) (max) @ If
420mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
100µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
13ns
Capacitance @ Vr, F
40pF @ 10V, 1MHz
Mounting Type
Surface Mount
Package / Case
S-Mini 2P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MA21D3800LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA21D3800L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MA21D38
Silicon epitaxial planar type
For high frequency rectification
■ Features
■ Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: November 2004
I
Low forward voltag V
High non-repetitive peak forward surge voltage
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge
current
Junction temperature
Storage time
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
F(AV)
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
3. * : t
= 1 A rectification is possible
of current from the operating equipment.
*
rr
measurement circuit
Parameter
Parameter
Pulse Generator
(PG-10N)
R
*
F
s
= 50 Ω
Bias Application Unit (N-50BU)
This product complies with the RoHS Directive (EU 2002/95/EC).
A
a
= 25°C±3°C
a
Symbol
Symbol
= 25°C
I
V
I
Wave Form Analyzer
(SAS-8130)
R
V
V
V
F(AV)
T
V
FSM
T
I
C
t
i
RM
stg
R
rr
F1
F2
F3
= 50 Ω
R
j
t
I
I
I
V
V
I
R
–55 to +125
F
F
F
F
L
R
R
= 0.5 A
= 0.7 A
= 1.0 A
= I
Rating
= 100 Ω
= 30 V
= 10 V, f = 1 MHz
125
1.0
30
30
20
R
= 100 mA, I
SKH00138BED
Conditions
V
Unit
R
°C
°C
V
V
A
A
rr
= 10 mA,
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: 3U
1: Anode
2: Cathode
t
0.60
0.80
±0.10
±0.10
I
F
5°
2
I
R
1
1.25
Output Pulse
F
L
= I
= 100 Ω
Min
±0.10
R
= 100 mA
t
rr
I
rr
t
0.34
0.36
0.38
Typ
= 10 mA
40
13
SMini2-F2 Package
Max
0.38
0.40
0.42
100
0.16
0.58
+0.1
–0.06
+0.02
–0.03
Unit: mm
Unit
µA
pF
ns
V
1
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