MBR10H100/45 Vishay, MBR10H100/45 Datasheet

MBR10H100/45

Manufacturer Part Number

MBR10H100/45

Description

DIODE SCHOTTKY 10A 100V TO-220AC

Manufacturer

Vishay

Datasheets

1.MBR10H100-E345.pdf (5 pages)

2.MBRF10H100CT-E345.pdf (5 pages)

Specifications of MBR10H100/45

Lead Free Status

Contains lead

Voltage - Forward (vf) (max) @ If

770mV @ 10A

Voltage - Dc Reverse (vr) (max)

100V

Current - Average Rectified (io)

10A

Current - Reverse Leakage @ Vr

4.5µA @ 100V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Through Hole

Package / Case

TO-220-2 Fused Center, TO-220AC

Product

Schottky Diodes

Peak Reverse Voltage

100 V

Forward Continuous Current

10 A

Max Surge Current

250 A

Configuration

Single

Forward Voltage Drop

0.88 V at 20 A

Maximum Reverse Leakage Current

4.5 uA

Operating Temperature Range

- 65 C to + 175 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MBR10H100
MBR10H100

Current page: 1 of 5
Download datasheet (518Kb)

Document Number: 88668

Revision: 08-Nov-07

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Maximum average forward rectified current at T

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

Peak repetitive reverse current per diode at t

Voltage rate of change (rated V

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min

MBR10H90CT

MBR10H100CT

PIN 1

PIN 3

TO-220AB

Dual Common-Cathode High-Voltage Schottky Rectifier

F(AV)

FSM

RRM

max.

High Barrier Technology for Improved High Temperature Performance

PIN 2

CASE

MBRB10H90CT

MBRB10H100CT

PIN 2

PIN 1

TO-263AB

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

)

= 25 °C unless otherwise noted)

HEATSINK

MBRF10H90CT

MBRF10H100CT

PIN 1

PIN 3

90 V, 100 V

ITO-220AB

5 A x 2

175 °C

0.61 V

3.5 µA

150 A

= 2 µs, 1 kHz

= 105 °C

MBR(F,B)10H90CT & MBR(F,B)10H100CT

PIN 2

total device

per diode

FEATURES

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power

converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder Dip 260 °C, 40 s (for TO-220AB and

• Component in accordance to RoHS 2002/95/EC

SYMBOL

peak of 245 °C (for TO-263AB package)

ITO-220AB package)

and WEEE 2002/96/EC

dV/dt

F(AV)

, T

RRM

RWM

FSM

RRM

STG

supplies,

Vishay General Semiconductor

MBR10H90CT

freewheeling

- 65 to + 175

10 000

1500

150

5.0

0.5

MBR10H100CT

100

diodes,

www.vishay.com

dc-to-dc

UNIT

V/µs

°C

Related parts for MBR10H100/45

MBR10H100/45 Summary of contents

Page 1

... Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink min Document Number: 88668 For technical questions within your region, please contact one of the following: Revision: 08-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)10H90CT & MBR(F,B)10H100CT FEATURES ITO-220AB • Guardring for overvoltage protection • ...

Page 2

... MBR(F,B)10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage per diode Maximum reverse current per diode at working peak (1) reverse voltage Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 88668 For technical questions within your region, please contact one of the following: Revision: 08-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)10H90CT & MBR(F,B)10H100CT 100 10 1 0.1 0.9 1.1 0.01 Figure 6. Typical Transient Thermal Impedance Per Diode ...

Page 4

... MBR(F,B)10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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