8ETX06-1 Vishay, 8ETX06-1 Datasheet - Page 4

• Manufacturer Part Number: 8ETX06-1
• Description: DIODE HYPERFAST 600V 8A TO-262
• Manufacturer: Vishay
• Series: FRED Pt™r

Specifications of 8ETX06-1

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 3V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 24ns
• Mounting Type: Through Hole, Radial
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 3V
• Reverse Recovery Time Trr Max: 19ns
• Forward Surge Current Ifsm Max: 110A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *8ETX06-1; VS-8ETX06-1; VS-8ETX06-1; VS8ETX06-1; VS8ETX06-1

8ETX06S/8ETX06-1
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
= Inverse power loss = V
Fig. 5 - Maximum Allowable Case Temperature vs.
0
0
Fig. 6 - Forward Power Loss Characteristics
Square wave (D = 0.50)
Rated V
See note (1)
C
I
I
F(AV)
F(AV)
= T
2
2
J
R
- Average Forward Current (A)
- Average Forward Current (A)
- (Pd + Pd
Average Forward Current
applied
4
DC
4
F(AV)
R1
6
REV
x V
x I
6
FM
) x R
R
8
DC
(1 - D); I
For technical questions, contact: [e-mail]
at (I
thJC
8
F(AV)
10
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
;
R
RMS limit
/D) (see fig. 6);
at V
10
12
R1
Hyperfast Rectifier,
= Rated V
14
12
8 A FRED Pt
R
TM
Fig. 7 - Typical Reverse Recovery Time vs. dI
100
100
V
T
T
Fig. 8 - Typical Stored Charge vs. dI
V
T
T
J
J
R
J
J
R
I
= 125 °C
= 25 °C
= 390 V
= 125 °C
= 25 °C
F
= 390 V
= 8 A
I
F
= 16 A
dI
dI
F
F
/dt (A/µs)
/dt (A/µs)
I
F
Document Number: 93937
I
= 16 A
F
I
= 16 A
F
= 16 A
Revision: 08-Sep-08
I
I
F
F
= 8 A
= 8 A
I
F
= 8 A
F
/dt
1000
1000
F
/dt