MBRS1100TR Vishay, MBRS1100TR Datasheet - Page 4

• Manufacturer Part Number: MBRS1100TR
• Description: DIODE SCHOTTKY 100V 1A SMB
• Manufacturer: Vishay

Specifications of MBRS1100TR

• Voltage - Forward (vf) (max) @ If: 780mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 1 A
• Max Surge Current: 870 A
• Configuration: Single
• Forward Voltage Drop: 0.75 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: VS-MBRS1100TR; VS-MBRS1100TR; VSMBRS1100TR; VSMBRS1100TR

MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. E 07/04
4
(2) Formula used: T
Pd = Forward Power Loss = I
Pd
180
170
160
150
140
130
120
110
REV
Fig. 4 - Maximum Average Forward Current
0
= Inverse Power Loss = V
Square wave (D = 0.50)
Rated Vr applied
see note (2)
Average Forward Current - I
Vs. Allowable Lead Temperature
0.4
C
= T
J
- (Pd + Pd
DC
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
0.8
F(AV)
REV
R1
1000
x V
100
x I
10
) x R
FM
R
Square Wave Pulse Duration - T
10
(1 - D); I
1.2
@ (I
thJC
F(AV)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
F(AV)
;
R
(A)
@ V
/
D) (see Fig. 6);
1.6
R1
100
= 80% rated V
1000
R
p
(Microsec)
Fig. 5 - Maximum Average Forward Dissipation
0.8
0.6
0.4
0.2
10000
1
0
0
Average Forward Current - I
Vs. Average Forward Current
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0.3
0.6
0.9
DC
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F(AV)
1.2
(A)
1.5