MBRS1100TR Vishay, MBRS1100TR Datasheet - Page 3

• Manufacturer Part Number: MBRS1100TR
• Description: DIODE SCHOTTKY 100V 1A SMB
• Manufacturer: Vishay

Specifications of MBRS1100TR

• Voltage - Forward (vf) (max) @ If: 780mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 1 A
• Max Surge Current: 870 A
• Configuration: Single
• Forward Voltage Drop: 0.75 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: VS-MBRS1100TR; VS-MBRS1100TR; VSMBRS1100TR; VSMBRS1100TR

Document Number: 94315
Revision: 05-Jul-10
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.2
100
T
T
T
0.1
10
0.00001
V
J
J
J
1
= 175 °C
= 125 °C
= 25 °C
FM
0.4
- Forward Voltage Drop (V)
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0.0001
0.6
(thermal resistance)
Fig. 4 - Maximum Thermal Impedance Z
Single pulse
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
0.8
0.001
0
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
t
Schottky Rectifier, 1.0 A
1
1.0
- Rectangular Pulse Duration (s)
20
T
J
V
= 25 °C
R
0.01
- Reverse Voltage (V)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
40
60
0.1
thJC
Characteristics (Per Leg)
80
[e-mail]
0
Fig. 2 - Typical Peak Reverse Current vs.
T
T
T
Notes:
1. Duty factor D = t
2. Peak T
J
J
J
= 175 °C
= 125 °C
= 75 °C
100
1
20
V
R
J
= P
- Reverse Voltage (V)
Reverse Voltage
Vishay Semiconductors
DM
P
DM
40
x Z
1
T
/t
10
t
J
1
thJC
2
= 25 °C
T
t
T
2
J
J
+ T
= 150 °C
= 100 °C
T
60
J
C
= 50 °C
100
80
.
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100
3