MA2772800L Panasonic - SSG, MA2772800L Datasheet

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MA2772800L

Manufacturer Part Number
MA2772800L
Description
DIODE SCHOTTKY 30V 30MA SSSMINI
Manufacturer
Panasonic - SSG
Datasheets

Specifications of MA2772800L

Voltage - Forward (vf) (max) @ If
1V @ 30mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
30mA (DC)
Current - Reverse Leakage @ Vr
300nA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
1ns
Capacitance @ Vr, F
1.5pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SSS Mini 2P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MA27728
MA2772800LTR
MA27728TR
MA27728TR

Available stocks

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Part Number:
MA2772800L
Manufacturer:
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Quantity:
1 437
Schottky Barrier Diodes (SBD)
MA27728
Silicon epitaxial planar type
For switching circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: January 2004
• High-density mounting is possible
• Low forward voltage V
• Small temperature coefficient of forward characteristic
• Small reverse current I
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Detection efficiency
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 2 GHz
4. * : t
and the leakage of current from the operating equipment.
Parameter
rr
Parameter
measurement circuit
Pulse Generator
(PG-10N)
R
*
s
= 50 Ω
R
F
and good wave detection efficiency η
Bias Application Unit (N-50BU)
Symbol
A
V
I
T
V
T
I
FM
RM
stg
F
R
j
a
Symbol
= 25°C ± 3°C
V
V
Wave Form Analyzer
(SAS-8130)
R
C
I
t
η
a
i
R
rr
F1
F2
t
= 50 Ω
= 25°C
−55 to +125
Rating
150
125
30
30
30
I
I
V
V
I
I
V
R
F
F
F
rr
L
R
R
IN
= 1 mA
= 30 mA
= I
= 1 mA, R
SKH00119BED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
Unit
mA
mA
°C
°C
V
V
Conditions
L
V
= 100 Ω
, f = 30 MHz
R
L
= 10 pF
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: R
t
2
1
0.27
0.60
I
F
+0.05
–0.02
±0.05
I
I
R
Output Pulse
F
R
L
= 10 mA
= 10 mA
Min
= 100 Ω
t
I
rr
rr
= 1 mA
Typ
1.5
1.0
65
t
SSSMini2-F2 Package
0.13
Max
300
0.4
1.0
+0.05
–0.02
1: Anode
2: Cathode
Unit: mm
Unit
nA
pF
ns
%
V
1

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