8EWS12S Vishay, 8EWS12S Datasheet - Page 2

• Manufacturer Part Number: 8EWS12S
• Description: DIODE STD REC 1200V 8A D-PAK
• Manufacturer: Vishay

Specifications of 8EWS12S

• Voltage - Forward (vf) (max) @ If: 1.1V @ 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: *8EWS12S; VS-8EWS12S; VS-8EWS12S; VS8EWS12S; VS8EWS12S

Electrical Specifications
8EWS..S SAFE
Bulletin I2108 rev. G 08/00
Voltage Ratings
Thermal-Mechanical Specifications
2
Absolute Maximum Ratings
**When mounted on 1" square (650mm
V
r
V
I
T
T
R
R
wt
T
I
I
I
I
RM
t
F(AV)
FSM
2
2
For recommended footprint and soldering techniques refer to application note #AN-994
FM
F(TO)
J
stg
thJA
thJC
t
t
Max. Forward Voltage Drop
Forward slope resistance
Threshold voltage
Max. Reverse Leakage Current
Parameters
Parameters
Max. Junction Temperature Range
Max. Storage Temperature Range
Soldering Temperature
Max. Thermal Resistance Junction
to Case
Typ. Thermal Resistance Junction
to Ambient (PCB Mount)**
Approximate Weight
Case Style
Max. Average Forward Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
Max. I
Parameters
Part Number
2
2
t for fusing
8EWS08S
8EWS10S
8EWS12S
t for fusing
IR
Series
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
8EWS..S
peak reverse voltage
8EWS..S
8EWS..S
TO-252AA (D-PAK)
- 55 to 150
- 55 to 150
1(0.03)
V
21.8
0.81
0.05
0.50
2040
144
204
1.1
240
200
170
RRM
50
8
3
, maximum
1000
1200
800
V
Units
g (oz.)
Units
Units
°C/W
°C/W
A
mA
A
m
°C
°C
°C
A
2
V
V
A
2
s
s
T
for 10 seconds (1.6mm from case)
DC operation
10ms Sine pulse, rated V
@ T
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
@ 8A, T
T
T
10ms Sine pulse, rated V
J
J
J
= 150°C
= 25 °C
= 150 °C
C
= 95° C, 180° conduction half sine wave
V
J
RSM
= 25°C
Conditions
peak reverse voltage
, maximum non repetitive
Conditions
Conditions
1100
1300
900
V
V
RRM
RRM
R
= rated V
applied
applied
RRM
150°C
I
mA
RRM
0.5