MUR8100EG ON Semiconductor, MUR8100EG Datasheet - Page 5

• Manufacturer Part Number: MUR8100EG
• Description: DIODE ULT FAST 8A 1000V TO220AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR8100EG

• Voltage - Forward (vf) (max) @ If: 1.8V @ 8A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 25µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.8 V
• Recovery Time: 100 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 100 A
• Reverse Current Ir: 25 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Current, Forward: 8 A
• Current, Reverse: 500 μA
• Current, Surge: 100 A
• Package Type: TO-220
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 2 °C/W
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Time, Recovery: 100 ns
• Voltage, Forward: 1.8 V
• Voltage, Reverse: 1000 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MUR8100EGOS

0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.01
0.05
0.01
D = 0.5
0.1
0.02
SINGLE PULSE
0.05
0.1
1000
300
100
30
10
1.0
0.2
Figure 10. Typical Capacitance
Figure 9. Thermal Response
0.5
V
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
1.0
t, TIME (ms)
2.0
10
5
P
5.0
(pk)
DUTY CYCLE, D = t
t
T
1
J
10
= 25°C
t
2
20
100
1
/t
2
50
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJC
J(pk)
qJC
(t) = r(t) R
= 1.5°C/W MAX
- T
100
C
= P
qJC
(pk)
1
200
Z
qJC
(t)
500 1000