MUR810G ON Semiconductor, MUR810G Datasheet - Page 2

• Manufacturer Part Number: MUR810G
• Description: DIODE ULT FAST 8A 100V TO-220AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR810G

• Voltage - Forward (vf) (max) @ If: 975mV @ 8A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 0.975 V
• Recovery Time: 35 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 100 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Current, Forward: 8 A
• Current, Reverse: 250 μA
• Current, Surge: 100 A
• Package Type: TO-220AC
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 3 °C/W
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Time, Recovery: 35 ns
• Voltage, Forward: 0.895 V
• Voltage, Reverse: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MUR810GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated V
Peak Repetitive Forward Current
(Rated V
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature Range
Maximum Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Ambiente
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
(i
(i
(Rated DC Voltage, T
(Rated DC Voltage, T
(I
(I
F
F
F
F
= 8.0 A, T
= 8.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, i
R
, Square Wave, 20 kHz), T
R
C
C
= 1.0 A, I
= 150°C)
= 25°C)
R
), T
J
J
= 150°C)
= 25°C)
REC
C
= 150°C
= 0.25 A)
Rating
Rating
Rating
C
= 150°C
http://onsemi.com
MURF860
MURF860
2
Symbol
Symbol
Symbol
T
V
V
I
R
R
R
R
I
J
F(AV)
I
FSM
RWM
V
RRM
, T
v
FM
i
t
qJC
qJC
qJA
qJA
R
rr
R
F
stg
805
805
805
50
810
100
810
810
0.895
0.975
250
3.0
5.0
35
25
−65 to +175
815
150
815
815
MUR
MUR
MUR
4.75
100
8.0
16
73
75
820
200
820
820
1.00
1.30
840
400
840
840
500
2.0
10
60
50
1.20
1.50
860
600
860
860
°C/W
°C/W
°C/W
°C/W
Unit
Unit
Unit
mA
°C
ns
V
A
A
A
V